DTA144EKA [SECOS]

PNP Digital Transistors (Built-in Resistors); PNP数字晶体管(内置电阻)
DTA144EKA
型号: DTA144EKA
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

PNP Digital Transistors (Built-in Resistors)
PNP数字晶体管(内置电阻)

晶体 数字晶体管
文件: 总2页 (文件大小:527K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DTA144EE/DTA144EUA/DTA144ECA  
DTA144EKA/DTA144ESA  
Elektronische Bauelemente  
PNP Digital Transistors (Built-in Resistors)  
FEATURES  
* Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external input  
resistors  
(see equivalent circuit).  
* Only the on/off conditions need to be set for operation,  
making device design easier.  
* The bias resistors consist of thin-film resistors with  
complete isolation to allow negative biasing of the  
input. They also have the advantage of almost  
completely eliminating parasitic effects.  
PIN CONNENCTIONS AND MARKING  
DTA144EE  
DTC144EUA  
SOT-323  
Abbreviated symbol: 16  
SOT-523  
Abbreviated symbol: 16  
DTA144EKA  
DTA144ECA  
SOT-23  
SOT-23-3L  
Abbreviated symbol: 16  
Abbreviated symbol: 16  
DTA144ESA  
TO-92S  
Any changing of specification will not be informed indivlidua  
http://www.SeCoSGmbH.com  
01-Jun-2007 Rev. A  
Page 1 of 2  
DTA144EE/DTA144EUA/DTA144ECA  
DTA144EKA/DTA144ESA  
Elektronische Bauelemente  
PNP Digital Transistors (Built-in Resistors)  
Absolute maximum ratings(Ta=25 oC)  
Limits (DTA144E)  
Parameter  
Symbol  
Unit  
E
UA  
KA  
-50  
CA  
SA  
VCC  
VIN  
V
V
Supply voltage  
Input voltage  
-40~10  
-30  
IO  
mA  
Output current  
IC(MAX)  
Pd  
-100  
200  
150  
300  
mW  
oC  
oC  
Power dissipation  
Junction temperature  
Storage temperature  
150  
Tj  
Tstg  
-55~150  
Electrical characteristics (Ta=25oC)  
Parameter  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Min.  
Typ.  
Max.  
Unit  
V
Conditions  
VCC=-5V ,IO=-100µA  
VO=-0.3V ,IO=-2 mA  
IO/II=-10mA/-0.5mA  
VI=-5V  
-0.5  
Input voltage  
-3  
Output voltage  
Input current  
-0.3  
-0.18  
-0.5  
V
mA  
Output current  
IO(off)  
GI  
µA  
VCC=-50V ,VI=0  
VO=-5V ,IO=-5mA  
DC current gain  
Input resistance  
Resistance ratio  
Transition frequency  
68  
32.9  
0.8  
R1  
47  
1
61.1  
1.2  
R2/R1  
fT  
250  
MHz  
VO=-10V ,IO=-5mA,f=100MHz  
Typical Characteristics  
Any changing of specification will not be informed individua  
http://www.SeCoSGmbH.com  
01-Jun-2007 Rev. A  
Page 2 of 2  

相关型号:

DTA144EKAT146

PNP -100mA -50V Digital Transistors
ROHM

DTA144EKAT147

Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
ROHM

DTA144EKAT246

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
ROHM

DTA144EL

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
ETC

DTA144EL-AE3-R

DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS)
UTC

DTA144EL-AL3-R

DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS)
UTC

DTA144EL-AN3-R

DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS)
UTC

DTA144ELA

TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SIP
ETC

DTA144ELATL2

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, FTL, 3 PIN
ROHM

DTA144ELATL3

Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, FTL, 3 PIN
ROHM

DTA144EM

Digital transistors (built-in resistors)
ROHM

DTA144EM

PNP Small Signal Transistor
TSC