BCX53 [SECOS]

Plastic-Encapsulate Transistors; 塑料封装晶体管
BCX53
型号: BCX53
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

Plastic-Encapsulate Transistors
塑料封装晶体管

晶体 晶体管
文件: 总2页 (文件大小:646K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BCX53  
PNP Transistors  
Elektronische Bauelemente  
Plastic-Encapsulate Transistors  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
SOT-89  
1
2
3
4.4~4.6  
1.4~1.8  
1.BASE  
1.4~1.6  
2.COLLECTOR  
3.EMITTER  
Features  
Power dissipation  
PCM:  
W (Tamb=25oC)  
0.36~0.56  
0.5  
Collector current  
ICM:  
Collector-base voltage  
0.32~0.52  
-1.0  
A
V
0.35~0.44  
1.5Ref.  
2.9~3.1  
V(BR)CBO  
:
-100.0  
Dimensision in Millimeter  
Operating and storage junction temperature range  
TJTstg: 150, -65 ~ 150oC  
ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified)  
SYMBOL  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
TEST CONDITIONS  
Ic=-100µA , IE=0  
IC=- 1 mA , IB=0  
IE=-100 µA, IC=0  
VCB=-30V, IE=0  
MIN  
-100  
-80  
MAX  
UNIT  
V
PARAMETER  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
-5  
V
-0.1  
-0.1  
µA  
µA  
Emitter cut-off current  
IEBO  
VEB=-5V, IC=0  
hFE(1)  
hFE(2)  
hFE(3)  
VCE=-2V, IC=- 5 mA  
VCE=-2V, IC=- 150 mA  
VCE=-2V, IC= -500mA  
63  
63  
40  
DC current gain  
250  
Collector-emitter saturation voltage  
VCE(sat)  
IC=-500 mA, IB=- 50mA  
-0.5  
V
Base-emitter  
voltage  
VBE  
IC= -500 mA, VCE=-2V  
-1  
V
VCE= -5V, IC=-10mA  
f = 100MHz  
Transition frequency  
DEVICE MARKING  
50  
MHz  
f T  
BCX53=AH  
BCX53-10=AK  
BCX53-16=AL  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2005 Rev. B  
Page 1 of 2  
BCX53  
PNP Transistors  
Elektronische Bauelemente  
Plastic-Encapsulate Transistors  
RANK  
BCX53  
BCX53-10  
63 - 160  
BCX53-16  
100 - 250  
RANGE  
63 - 250  
CHARACTERISTICS CURVE  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2005 Rev. B  
Page 2 of 2  

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