BCP53 [SECOS]

PNP Silicon Medium Power Transistor; PNP硅中功率晶体管
BCP53
型号: BCP53
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

PNP Silicon Medium Power Transistor
PNP硅中功率晶体管

晶体 晶体管
文件: 总2页 (文件大小:286K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BCP53  
-1A , -100V  
PNP Silicon Medium Power Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURES  
SOT-223  
Collector-Emitter Voltage:VCEO= -80V  
Complementary types: BCP56 (NPN)  
A
M
CLASSIFICATION OF hFE (2)  
4
BCP53-10  
BCP53-16  
100~250  
Product-Rank  
Range  
Top View  
C B  
1
2
63~160  
3
K
F
L
E
PACKAGE INFORMATION  
D
Package  
MPQ  
LeaderSize  
13’ inch  
G
H
J
SOT-223  
2.5K  
Millimeter  
Millimeter  
Min. Max.  
0.10  
REF.  
REF.  
Min.  
Max.  
6.70  
7.30  
3.70  
1.90  
4.70  
0.82  
A
B
C
D
E
F
6.20  
6.70  
3.30  
1.42  
4.50  
0.60  
G
H
J
K
L
-
-
0.25  
-
-
0.35  
-
2.30 REF.  
M
2.90  
3.10  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Ratings  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
VCBO  
VCEO  
VEBO  
IC  
PD  
Tj  
-100  
-80  
-5  
-1  
1.5  
150  
V
V
V
A
W
°C  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Min.  
-100  
-80  
Max.  
Unit  
V
V
V
nA  
Test Conditions  
IC= -0.1mA , IE=0  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= -1mA, IB=0  
IE= -10μA, IC=0  
VCB= -30V, IE=0  
VCE= -2V, IC= -5mA  
VCE= -2V, IC= -150mA  
VCE= -2V, IC= -500mA  
IC= -500mA, IB= -50mA  
VCE= -2V, IC= -500mA  
VCE= -5V, IC= -10mA, f=100MHZ  
-5  
-100  
250  
h
(1)  
FE  
63  
63  
40  
DC current gain1  
h
(2)  
FE  
h
(3)  
FE  
Collector-emitter saturation voltage1  
Base-emitter voltage1  
Transition frequency  
Note:  
VCE(sat)  
VBE(on)  
f T  
-0.5  
-1  
V
V
MHz  
100  
1. Pulse Test: Pulse Width380us, Duty Cycle2%.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
25-Jan-2011 Rev. B  
Page 1 of 2  
BCP53  
-1A , -100V  
PNP Silicon Medium Power Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
25-Jan-2011 Rev. B  
Page 2 of 2  

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