BCP51-C [SECOS]
PNP Plastic Encapsulate Transistor;
| 型号： | BCP51-C |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | PNP Plastic Encapsulate Transistor |
| 文件： | 总2页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP51-C
-1A, -45V
PNP Plastic Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
ꢀ
ꢀ
ꢀ
For AF Driver and Output Stages
High Collector Current
Low Collector-Emitter Saturation Voltage
SOT-223
A
M
4
Top View
C B
PACKAGE INFORMATION
1
2
Package
MPQ
Leader Size
3
K
F
L
E
SOT-223
2.5K
13 inch
D
Collector
2
4
G
H
J
ORDER INFORMATION
Millimeter
Millimeter
Min. Max.
0.18
2.00 REF.
0.20 0.40
1.10 REF.
2.30 REF.
2.80 3.20
Part Number
Type
REF.
REF.
Min.
Max.
6.70
7.30
3.80
1.90
4.75
0.85
A
B
C
D
E
F
5.90
6.70
3.30
1.42
4.45
0.60
G
H
J
K
L
-
BCP51-16-C
Lead (Pb)-free and Halogen-free
1
Base
M
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
-45
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
-45
V
Emitter-Base Voltage
-5
V
Collector Current-Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Storage Temperature Range
-1
A
PD
1.5
W
RθJA
TSTG
94
°C/W
°C
-65~150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min.
-45
-45
-5
Max.
Unit
V
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
-
IC= -0.1mA, IE=0
-
V
IC= -10mA, IB=0
-
-100
-
V
IC= -10µA, IE=0
-
nA
VCB= -30V, IE=0
25
100
25
-
VCE= -2V, IC= -5mA
VCE= -2V, IC= -150mA
VCE= -2V, IC= -500mA
IC= -500mA, IB= -50mA
VCE= -2V, IC= -500mA
DC Current Gain
hFE
250
-
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(sat)
VBE
-0.5
-1
V
V
-
Transition Frequency
fT
100
-
MHz VCE= -10V, IC= -50mA, f=100MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Oct-2017 Rev. D
Page 1 of 2
BCP51-C
-1A, -45V
PNP Plastic Encapsulate Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Oct-2017 Rev. D
Page 2 of 2
相关型号：
BCP51E6327HTSA1
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
©2020 ICPDF网 联系我们和版权申明