BC638 [SECOS]

PNP Type Plastic Encapsulate Transistors; PNP型塑料封装晶体管
BC638
型号: BC638
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

PNP Type Plastic Encapsulate Transistors
PNP型塑料封装晶体管

晶体 晶体管
文件: 总2页 (文件大小:217K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC636/638/640  
PNP Type  
Elektronische Bauelemente  
Plastic Encapsulate Transistors  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
TO-92  
FEATURE  
4.55±0.2  
3.5±0.2  
Power Dissipation:  
PCM: 0.83 mW (Tamb=25oC)  
+0.08  
0.43  
–0.07  
46+0.1  
0.  
–0.1  
(1.27 Typ).  
1: Emitter  
2: Collector  
3: Base  
1.25+00..22  
1
2 3  
2.54±0.1  
MAXIMUM RATINGS (TA=25 oC unless otherwise specified)  
PARAMETERS  
Collector - Emitter Voltage  
SYMBOLS  
VCEO  
VALUES  
UNIT  
BC636  
BC638  
BC640  
BC636  
BC638  
BC640  
-45  
-60  
-80  
-45  
-60  
-100  
-5  
V
V
V
V
V
V
V
A
Collector - Base Voltage  
VCBO  
Emitter - Base Voltage  
VEBO  
IC  
Collector Current - Continuous  
Collector Power Dissipation  
-1  
-1.5  
100  
ICP  
A
IB  
mA  
oC  
Junction, Storage Temperature  
TJ,TSTG  
RθJA*  
150, -65 ~ 150  
150  
Thermal Resistance from Junction to Ambient  
K/w  
o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise specified)  
PARAMETERS  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP MAX  
UNIT  
-45  
-60  
-80  
V
V
IC=10mA, IB=0  
BC636  
BC638  
BC640  
Collector - emitter breakdown voltage  
V(BR)CEO  
V
ICBO  
IEBO  
VCB=-30V, IE=0  
Collector cut-off current  
Emitter cut-off current  
µA  
µA  
-0.1  
-0.1  
VEB=-5V, IB=0  
hFE(1)  
hFE(2)  
VCE=-2V, IC=-5mA  
40  
63  
BC636-10  
VCE=-2V, IC=-150mA  
160  
250  
DC current gain  
BC636-16, BC638-16, BC640-16  
VCE=-2V, IC=-500mA  
100  
25  
hFE(3)  
VCE(sat)  
VBE(ON)  
fT  
IC=-500mA, IB=-50mA  
VCE=-2V, IC=-500mA  
Collector - emitter saturation voltage  
Base - emitter voltage  
-0.5  
-1  
V
V
VCE=-5V, IC=-50mA, f=100MHz 100  
MHz  
Transition frequency  
CLASSIFICATION OF hFE(2)  
BC636-10  
63-160  
BC636-16, BC638-16, BC640-16  
100-250  
RANK  
RANGE  
http://www.SeCoSGmbH.com/  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 2  
BC636/638/640  
PNP Type  
Elektronische Bauelemente  
Plastic Encapsulate Transistors  
TYPICAL CHARACTERISTICS  
http://www.SeCoSGmbH.com/  
01-Jun-2002 Rev. A  
Any changing of specification will not be informed individu  
Page 2of 2  

相关型号:

BC638,112

TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal
NXP

BC638,116

TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal
NXP

BC638-10

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-92
ETC

BC638-10-AMMO

TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
NXP

BC638-10-T/R

TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
NXP

BC638-16

PNP medium power transistors
NXP

BC638-16-T/R

TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal
NXP

BC638-AMMO

TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
NXP

BC638-AP

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC

BC638-AP-HF

Small Signal Bipolar Transistor,
MCC

BC638-BP

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC

BC638-BP-HF

Small Signal Bipolar Transistor,
MCC