2SD2153 [SECOS]
NPN Plastic Encapsulated Transistor;
| 型号： | 2SD2153 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic Encapsulated Transistor 放大器 晶体管 |
| 文件： | 总2页 (文件大小：341K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2153
2A , 30V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-89
ꢀ
Small Flat Package
General Purpose Application
ꢀ
4
1
2
CLASSIFICATION OF hFE(1)
3
B
C
A
E
E
Product-Rank
2SD2153-U
2SD2153-V
820~1800
C
Range
560~1200
B
D
K
F
G
H
MARKING
Collector
J
L
2
DN
Millimeter
Millimeter
REF.
REF.
Min.
Max.
4.60
4.25
1.60
2.60
Min.
Max.
PACKAGE INFORMATION
1
Base
A
B
C
D
4.40
3.94
1.40
2.25
G
H
J
0.40
0.58
1.50 TYP
3.00 TYP
Package
MPQ
Leader Size
7 inch
K
0.32
0.35
0.52
0.44
3
Emitter
E
F
1.50
0.89
1.85
1.20
L
SOT-89
1K
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
30
Collector-Emitter Voltage
Emitter-Base Voltage
25
V
6
V
Collector Current-Continuous
Pulsed Collector Current 1
Collector Power Dissipation
Maximum Junction to Ambient
Junction & Storage Temperature
2
A
ICP
3
0.5
A
PC
W
RθJA
250
°C / W
°C
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min.
30
Typ.
Max. Unit
Test conditions
-
-
V
V
V
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
25
-
-
-
6
-
-
-
-
-
0.5
0.5
1800
0.5
-
µA VCB=20V, IE=0
µA VEB=5V, IC=0
VCE=6V, IC=500mA
Emitter Cut-Off Current
IEBO
DC Current Gain1
hFE
560
-
Collector-Emitter Saturation voltage
Transition Frequency
VCE(sat)
fT
-
-
-
-
V
IC=1A, IB=20mA
110
22
MHz VCE=10V,IC=10mA,f=100MHz
pF VCB=10V, IE=0, f=1MHz
Collector Output Capacitance
COB
-
Note:
1. Single pulse, PW=10mS
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
20-Nov-2013 Rev. A
Page 1 of 2
2SD2153
2A , 30V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
20-Nov-2013 Rev. A
Page 2 of 2
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