2SD2098 [SECOS]
NPN Silicon Epitaxial Planar Tra nsistor; NPN硅外延平面茶nsistor
| 型号： | 2SD2098 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Silicon Epitaxial Planar Tra nsistor |
| 文件： | 总3页 (文件大小：868K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2098
NPN Silicon
Elektronische Bauelemente
Epitaxial PlanarTransistor
RoHS Compliant Product
SOT-89
Description
The 2SD2098 is an epitaxial planar
type NPN silicon transistor.
Features
* Excellent DC Current Gain Characteristics
* Low Saturation Voltage, Typically VCE(SAT)=0.25V
At IC/IB=4A/0.1A
Millimeter
Millimeter
Min. Max.
3.00 REF.
REF.
REF.
Min.
4.4
Max.
4.6
A
B
C
D
E
F
G
H
I
J
K
L
M
4.05
1.50
1.30
2.40
0.89
4.25
1.70
1.50
2.60
1.20
1.50 REF.
0.40
1.40
0.35
0.52
1.60
0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings at TA=25oC
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
50
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
20
V
V
A
6
IC
ICP
PD
Collector Current (DC)
Collector Current (Pulse)*1
5
A
10
0.5 (2.0*2 )
Total Power Dissipation
W
O
Storage Temperature
Junction and
C
TJ,
-55~+150
Tstg
*1: Single pulse, PW=10ms
*2: When mounted on a 40*40*0.7mm ceramic board
o
C
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
Typ.
Uni
t
Parameter
Symbol
Min
50
20
6
Max
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
IC=50µA,IE=0
IC=1mA,IB=0
BVCBO
BVCEO
-
-
-
-
-
V
V
BVEBO
ICBO
-
V
uA
uA
V
IE=
50µA,IC=0
VCB=40V,IE=0
-
-
-
0.5
0.5
1
-
Emitter-Base Cutoff Current
IEBO
VEB=
5V,IC=0
IC=4A,IB=0.1A
Collector Saturation Voltage
DC Current Gain
*VCE(sat)
*hFE
-
0.25
-
120
390
-
VCE= V, IC=0.5A
2
Gain-Bandwidth Product
Output Capacitance
fT
-
-
MH
VCE= 6V, IC=50mA,f=100MH
150
z
z
-
Cob
pF
VCB=20V, f=1MHz,IE=0
30
≦
≦
Measured under pulse condition.Pulse width 300 s, Duty Cycle 2%
*
µ
Classification of hFE
R
Rank
Q
120~270
Range
180~390
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
2SD2098
NPN Silicon
Elektronische Bauelemente
Epitaxial PlanarTransistor
Characteristics Curve
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
Page 2 of 3
01-Jun-2002 Rev. A
2SD2098
NPN Silicon
Elektronische Bauelemente
Epitaxial PlanarTransistor
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
Page 3of 3
01-Jun-2002 Rev. A
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