概述
数据手册2SD1949 概述
NPN Silicon General Purpose Transistor NPN硅通用晶体管
2SD1949 数据手册
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PDF下载2SD1949
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
FEATURES
SOT-323
Min
A
L
Dim
A
B
C
D
G
H
J
Max
* High current.(IC=5A)
1.800 2.200
1.150 1.350
0.800 1.000
0.300 0.400
1.200 1.400
0.000 0.100
0.100 0.250
0.350 0.500
0.590 0.720
2.000 2.400
0.280 0.420
3
* Low saturation voltage, typically
VCE(sat)=0.1V at IC / IB=150mA / 15mA
S
C
Top View
B
1
2
V
G
COLLECTOR
3
K
L
H
J
D
1
K
BASE
2
S
EMITTER
V
All Dimension in mm
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
VCBO
Parameter
Value
50
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
50
V
5
V
Collector Current -Continuous
Collector Dissipation
500
200
150
-55-150
mA
mW
℃
PC
TJ
Junction Temperature
Storage Temperature
Tstg
℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
Test conditions
IC= 100µA , IE=0
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
50
50
5
V
V
IC=1mA , IB=0
IE= 100µA, IC=0
VCB= 30 V, IE=0
VEB=4V, IC=0
V
0.5
0.5
390
0.4
µA
µA
Emitter cut-off current
IEBO
DC current gain
hFE
VCE=3V, IC=10mA
IC= 150mA, IB=15mA
120
Collector-emitter saturation voltage
VCE(sat)
V
V
CE=5V, IC=20mA
Transition frequency
fT
250
6.5
MHz
pF
f=100 MHz
Output capacitance
CLASSIFICATION OF hFE
Rank
Cob
VCB=10V, IE=0,f=1 MHz
Q
R
Range
120-270
YQ
180-390
YR
Marking
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
2SD1949
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
Electrical characteristic curves
0.50
0.45
0.40
0.35
1000
200
100
80
60
40
20
0
VCE=6V
Ta=25 C
VCE=6V
100
500
50
20
10
VCE=3V
0.30
0.25
200
1V
5
0.20
0.15
0.10
100
2
1
0.5
50
0.05
IB=0mA
3
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
4
5
0.1 0.2 0.5
1
2
5 10 20 50 100200 500
BASE TO VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Ground emitter output characteristics
COLLECTOR CURRENT IC (mA)
Fig.1 Ground emitter propagation
characteristics
Fig.3 DC current gain vs. Collector current ( )
1000
500
Ta=25 C
VCE=10V
IC/IB=10
0.5
0.5
Ta=75 C
25 C
0.2
0.1
200
100
50
0.2
0.1
-
25 C
0.05
0.02
0.05
25 C
Ta=75 C
-
25 C
20
0.02
1
2
5
10 20 50 100 200 500 1000
5
10 20
50 100 200
500
5
10 20 50 100 200 500 1000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
Fig.5 Collector-emitter saturation voltage
vs. Collector current
Fig.6 Collector-emitter saturation voltage
vs. collector current
Fig.4 DC current gain vs. Collector currnet (
)
Ta=25 C
f=1MHz
IE=0A
Ta=25 C
50
VCE=6V
500
Cib
20
Cob
10
200
100
5
0.1 0.2
0.5
1
2
5
10 20
-1
-2
-5
-10
-20
-50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : IE (mA)
Fig.8 Transition frequency
vs.emitter current
Fig.7 Input-and-output capacity
vs.voltage characteristic
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
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