2SD1815_15 [SECOS]
NPN Epitaxial Planar Silicon Transistor;
| 型号： | 2SD1815_15 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Epitaxial Planar Silicon Transistor |
| 文件： | 总2页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1815
3A , 120V
NPN Epitaxial Planar Silicon Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-251
FEATURES
Low Collector-to-Emitter Saturation Voltage
Excllent Linearity of hFE
High fT
Fast Switching Time
A
B
C
D
CLASSIFICATION OF hFE
Product-Rank
2SD1815-Q
2SD1815-R
100~200
2SD1815-S
140~280
G E
Range
70~140
K
H
P
F
Collector
M
J
Millimeter
Millimeter
REF.
REF.
Min.
Max.
6.80
5.50
2.40
0.90
7.50
9.65
Min.
5.40
0.85
Max.
6.25
1.50
Base
A
B
C
D
E
F
6.35
4.90
2.15
0.43
6.50
7.20
G
H
J
K
M
P
2.30
0.60
0.50
0.43
1.05
0.90
0.62
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to Base Voltage
120
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
100
V
6
V
A
3
1
PC
W
℃
℃
TJ
150
Storage Temperature
TSTG
-55 ~ 150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min.
120
100
Typ.
-
-
Max.
-
-
Unit
V
V
Test Conditions
IC=10μA, IE=0
IC=1mA, IB=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
6
-
-
-
V
IE=10μA, IC=0
-
-
1
μA
μA
VCB=100V, IE=0
VEB=4V, IC=0
Emitter cut-off current
IEBO
-
1
70
40
-
-
280
VCE=5V, IC=500mA
VCE=5V, IC=2A
DC current gain
hFE
-
-
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
Collector Output Capacitance
Turn-on time
VCE(sat)
-
0.4
V
V
IC=1.5A, IB=150mA
IC=1.5A, IB=150mA
VCE=10V, IC=500mA
VCB=10V, IE=0, f=1MHz
VBE(sat)
-
-
1.2
fT
COB
ton
tS
-
180
25
100
900
50
-
-
-
-
-
MHz
pF
-
-
VCC=50V, IC=1.5A,
nS
Storage time
-
IB1= -IB2= -0.15A
Fall time
tf
-
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Feb-2014 Rev. B
Page 1 of 2
2SD1815
3A , 120V
NPN Epitaxial Planar Silicon Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Feb-2014 Rev. B
Page 2 of 2
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