2SC4098 [SECOS]
NPN Plastic-Encapsulate Transistor; NPN塑封装晶体管
| 型号： | 2SC4098 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic-Encapsulate Transistor |
| 文件： | 总1页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4098
0.05A , 40V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-323
Low Collector Capacitance.
High Gain.
A
L
3
3
Top View
E
C B
1
CLASSIFICATION OF hFE
1
2
2
K
F
Product-Rank 2SC4098-N 2SC4098-P 2SC4098-Q
D
Range
56~120
AN
82~180
AP
120~270
AQ
H
J
G
Marking
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
0.100 REF.
0.525 REF.
A
B
C
D
E
F
1.80
1.80
1.15
0.80
1.20
0.20
2.20
2.45
1.35
1.10
1.40
0.40
G
H
J
K
L
PACKAGE INFORMATION
0.08
-
0.25
-
Package
MPQ
LeaderSize
7’ inch
0.650 TYP.
SOT-323
3K
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
Collector-Base Voltage
40
V
V
Collector-Emitter Voltage
25
Emitter-Base Voltage
5
50
V
Collector Current
mA
mW
°C / W
°C
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction & Storage temperature
PC
200
RθJA
625
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Symbol Min.
Typ.
Max.
-
Unit
V
Test Condition
IC=50μA, IE=0
IC=1mA, IB=0
V(BR)CBO
40
25
5
-
-
-
-
-
-
-
-
-
Collector-Emitter Breakdown Voltage V(BR)CEO
-
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-off Current
V(BR)EBO
ICBO
-
V
IE=50μA, IC=0
VCB=24V, IE=0
VEB=3V, IC=0
-
500
500
270
0.3
-
nA
nA
IEBO
-
DC Current Gain
hFE
56
-
VCE=6V, IC=1mA
IC=10mA, IB=1mA
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
VCE(sat)
fT
Cob
V
150
-
MHz VCE=6V, IC=1mA, f=100MHz
pF
2.2
VCB=6V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Mar-2011 Rev. A
Page 1 of 1
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