2SC2712 [SECOS]
NPN Silicon General Purpose Transistor; NPN硅通用晶体管
| 型号： | 2SC2712 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Silicon General Purpose Transistor |
| 文件： | 总1页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2712
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
SOT-23
Min
Dim
A
B
C
D
G
H
J
Max
Collector
3
FEATURES
2.800 3.040
1.200 1.400
0.890 1.110
0.370 0.500
1.780 2.040
0.013 0.100
0.085 0.177
0.450 0.600
0.890 1.020
2.100 2.500
0.450 0.600
1
Base
*Power Dissipation
PCM:
2
150 mW (Tamb=25oC)
150 mA
Emitter
*Collector Current
A
ICM:
L
*Collector-Base Voltage
3
V(BR)CBO:
60 V
K
L
S
B
Top View
1
2
*Operating and
Storage Junction Temperature Range
-55~+150oC
*RoHS Compliant Product
S
V
G
TJ,TSTG:
V
All Dimension in mm
C
H
J
D
K
ELECTRICAL CHARACTERISTICS (Tamb=25o
unless otherwise specified)
C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= 100µA , IE=0
IC=1mA , IB=0
MIN
60
50
5
TYP
MAX
UNIT
V
V
IE= 100µA, IC=0
V
VCB= 60 V, IE=0
0.1
0.1
µA
µA
IEBO
VEB=5V, IC=0
hFE
VCE=6V, IC=2mA
IC= 100mA, IB=10mA
VCE=10V, IC= 1mA
VCB=10V, IE=0,f=1 MHz
70
80
700
0.25
DC current gain
VCE(sat)
fT
0.1
V
Collector-emitter saturation voltage
Transition frequency
MHz
pF
Cob
2.0
1.0
3.5
10
Output capacitance
VCE=6V,IC=0.1mA,f=1kHz,
NF
dB
Noise Figure
Rg=10kΩ
CLASSIFICATION OF hFE
Rank
O
Y
120-240
LY
GR
BL
70-140
LO
200-400
350-700
Range
Marking
LG
LL
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 1
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