2SC2551 [SECOS]
NPN Plastic Encapsulated Transistor; NPN塑料封装晶体管
| 型号： | 2SC2551 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic Encapsulated Transistor |
| 文件： | 总3页 (文件大小：772K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2551
0.1 A , 300 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
High Voltage
G
H
Low Saturation Voltage
Small Collector Output Capacitance
Complementary to 2SA1091
J
Emitter
Collector
Base
A
D
B
CLASSIFICATION OF hFE(1)
K
Millimeter
REF.
Min.
4.40
4.30
12.70
3.30
0.36
0.36
Max.
4.70
4.70
-
3.81
0.56
0.51
Product-Rank
2SC2551-R
2SC2551-O
50~150
A
B
C
D
E
F
E
C
F
Range
30~90
G
H
J
1.27 TYP.
1.10
2.42
0.36
-
2.66
0.76
K
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
VCEO
VEBO
IC
300
V
V
Collector to Emitter Voltage
Emitter to Base Voltage
300
6
0.1
V
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
A
PC
400
mW
°C
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
300
-
-
-
-
V
V
IC=100μA, IE=0
IC=1mA, IB=0
300
6
-
-
-
V
IE=100μA, IC=0
VCB=300V, IE=0
VEB=6V, IC=0
-
0.1
0.1
150
-
μA
μA
Emitter Cut – Off Current
IEBO
-
-
hFE(1)
30
20
-
-
VCE=10V, IC=20mA
VCE=10V, IC=1mA
IC=20mA, IB=2mA
IC=20mA, IB=2mA
DC Current Gain
*
hFE(2)
-
Collector to Emitter Saturation Voltage
Base to Emitter voltage
VCE(sat)
VBE(sat)
fT
-
0.5
1.2
-
V
V
-
-
Transition Frequency
-
80
-
MHz VCE=10V, IC=20mA
pF VCB=20V, IE=0, f=1MHz
Collector Output Capacitance
Cob
-
4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Feb-2011 Rev. A
Page 1 of 3
2SC2551
0.1 A , 300 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Feb-2011 Rev. A
Page 2 of 3
2SC2551
0.1 A , 300 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Feb-2011 Rev. A
Page 3 of 3
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