概述
规格参数
数据手册2SC1213A 概述
NPN Silicon General Purpose Transistor NPN硅通用晶体管 其他晶体管
2SC1213A 规格参数
| 生命周期： | Contact Manufacturer | Reach Compliance Code： | compliant |
| 风险等级： | 5.59 | Base Number Matches： | 1 |
2SC1213A 数据手册
通过下载2SC1213A数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载2SC1213 & 2SC1213A
NPN Silicon
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURE
TO-92
Low frequency amplifier
Power dissipation
3
PCM:
0.4 W (Tamb=25℃)
2
Collector current
1
2
3
ICM:
Collector-base voltage
V(BR)CBO 2SC1213
2SC1213A :
0.5
A
1
:
:
35
50
V
V
1. Emitter
2. Collector
3. Base
Operating and storage junction temperature range
TJ, Tstg:
-55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
35
50
Collector-base breakdown voltage
2SC1213
V(BR)CBO
V
Ic= 10µA , IE=0
2SC1213A
35
50
Collector-emitter breakdown voltage 2SC1213
V(BR)CEO
IC= 1 mA , IB=0
V
2SC1213A
V(BR)EBO
ICBO
4
V
Emitter-base breakdown voltage
Collector cut-off current
IE=10µA, IC=0
VCB= 20V , IE=0
VCE=3V, IC= 10mA
VCE=3V, IC= 500mA
0.5
µA
hFE(1)
60
10
320
DC current gain
hFE(2)
VCE(sat)
VBE
IC= 150mA, IB= 15 mA
VCE= 3V, IC= 10 mA
0.2
0.6
V
V
Collector-emitter saturation voltage
Base-emitter voltage
0.75
CLASSIFICATION OF hFE(1)
Rank
B
C
D
60-120
100-200
160-320
Range
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
2SC1213 & 2SC1213A
PNP Silicon
Elektronische Bauelemente
General Purpose Transistor
Typical Output Characteristics (1)
Maximum Collector Dissipation Curve
1.0
100
80
60
40
20
0.9
600
400
200
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 mA
IB = 0
0
2
4
6
8
10
0
50
100
150
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
VCE = 3 V
Typical Output Characteristics (2)
10
30
10
500
400
300
200
100
9
8
7
6
5
4
3
3
2
1.0
1 mA
IB = 0
0.3
0
2
4
6
8
10
0
0.2
0.4 0.6 0.8 1.0
1.2
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
140
120
100
80
VCE = 3 V
Ta = 25°C
60
40
20
0
2
5
10 20
50 100 200 500
Collector Current IC (mA)
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2
2SC1213A 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SC1213A(K) | ETC | 获取价格 |
|
|
| 2SC1213A(K)B | RENESAS | SMALL SIGNAL TRANSISTOR, TO-92 | 获取价格 |
|
| 2SC1213A(K)BRF | HITACHI | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92(1), 3 PIN | 获取价格 |
|
| 2SC1213A(K)BRR | HITACHI | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92(1), 3 PIN | 获取价格 |
|
| 2SC1213A(K)BRR | RENESAS | 500mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN | 获取价格 |
|
| 2SC1213A(K)C | HITACHI | 暂无描述 | 获取价格 |
|
| 2SC1213A(K)CRF | HITACHI | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92(1), 3 PIN | 获取价格 |
|
| 2SC1213A(K)CRR | HITACHI | 500mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN | 获取价格 |
|
| 2SC1213A(K)D | RENESAS | SMALL SIGNAL TRANSISTOR, TO-92 | 获取价格 |
|
| 2SC1213A(K)DRF | HITACHI | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92(1), 3 PIN | 获取价格 |
|
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