2N7002KW_15 [SECOS]
N-Ch Small Signal MOSFET with ESD Protection;
| 型号： | 2N7002KW_15 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Small Signal MOSFET with ESD Protection |
| 文件： | 总4页 (文件大小：527K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002KW
115mA , 60V, RDS(ON) 4
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-323
RDS(ON), VGS@10V, IDS@500mA=3
RDS(ON), VGS@4.5V, IDS@200mA=4
A
Advanced Trench Process Technology
L
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems,
Solid-State Relays Drivers：Relays, Displays, Lamps,
Solenoids, Memories, etc.
3
3
Top View
C B
1
1
2
2
K
F
E
ESD Protected 2KV HBM
In compliance with EU RoHS 2002/95/EC directives
D
H
G
J
MECHANICAL DATA
Case: SOT-323 Package
Terminals: Solderable per MIL-STD-750,
Method 2026
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
0.100 REF.
0.525 REF.
A
B
C
D
E
F
1.80
1.80
1.15
0.80
1.20
0.20
2.20
2.45
1.35
1.10
1.40
0.40
G
H
J
K
L
0.08
-
0.25
-
MARKING
0.650 TYP.
K72
Drain
PACKAGE INFORMATION
Gate
Package
MPQ
LeaderSize
SOT-323
3K
7’ inch
Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
ID
60
±20
V
V
Continuous Drain Current
Pulsed Drain Current 1
115
mA
mA
IDM
800
TA=25°C
TA=75°C
200
Maximum Power Dissipation
PD
mW
120
Thermal Resistance Junction-Ambient (PCB mounted) 2
625
°C / W
°C
R
JA
Operating Junction and Storage Temperature
TJ, TSTG
-55~150
Notes:
1. Maximum DC current limited by the package.
2. Surface mounted on FR4 board, t < 5sec.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Mar-2011 Rev. A
Page 1 of 4
2N7002KW
115mA , 60V, RDS(ON) 4
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
N-CHANNEL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ.2 Max. Unit
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
VGS(th)
60
-
-
-
-
-
-
-
-
2.5
4
VGS=0, ID=10μA
V
1
VDS= VGS, ID=250μA
VGS=4.5V, ID=200mA
VGS=10V, ID=500mA
VDS=60V, VGS=0
-
Drain-Source On-Resistance
RDS(ON)
Ω
-
3
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward Transconductance
IDSS
IGSS
gfs
-
1
μA
μA
-
±10
-
VDS=0, VGS= ±20V
100
mS VDS=15V, ID=250mA
Dynamic
V
DS=15V, VGS=4.5V, ID=200mA
Total Gate Charge
Turn-On Time
Qg
-
-
-
0.8
20
nC
nS
t(on)
-
-
VDD=30V, RL=150Ω,
ID=200mA, VGEN=10V,
RG=10Ωꢀ
Turn-Off Time
t(off
-
40
Input Capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
35
10
5
pF
VDS=25V, VGS=0V, f=1MHz
IS=200mA, VGS=0V
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Diode Forward Voltage
VSD
IS
-
-
-
0.82
1.3
115
800
V
Continuous Diode Forward Current
Pulse Diode Forward Current
-
-
mA
mA
ISM
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Mar-2011 Rev. A
Page 2 of 4
2N7002KW
115mA , 60V, RDS(ON) 4
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
CHARACTERISTIC CURVE
FIG.1‐Ouput Characteristic
FIG.2‐Transfer Characteristic
FIG.3‐On Resistance vs Drain Current
FIG.4‐ On Resistance vs Gate to Source Voltage
FIG.5‐On Resistance vs Junction Temperature
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Mar-2011 Rev. A
Page 3 of 4
2N7002KW
115mA , 60V, RDS(ON) 4
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
CHARACTERISTIC CURVE
FIG.6‐Gate Charge Waveform
FIG.7‐Gate Charge
FIG.8‐Threshold Voltage vs Temperature
FIG.9‐Breakdown Voltage vs Junction Temperature
FIG.10‐Source‐Drain Diode Forward Voltage
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Mar-2011 Rev. A
Page 4 of 4
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