2N5550 [SECOS]
NPN Plastic Encapsulated Transistor; NPN塑料封装晶体管
| 型号： | 2N5550 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic Encapsulated Transistor |
| 文件： | 总2页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5550
0.6 A, 160 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
ꢀ
ꢀ
ꢀ
ꢀ
Switching and amplification in high voltage
TO-92
Applications such as telephony
Low current(max.600mA)
High voltage(max.160V)
G
H
J
B
Millimeter
REF.
A
D
Min.
Max.
4.70
4.70
-
A
B
C
D
E
F
4.40
4.30
12.70
3.30
0.36
0.36
Collector
3
K
3.81
0.56
0.51
2
E
C
F
G
H
J
1.27 TYP.
1.10
2.42
0.36
-
Base
2.66
0.76
K
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
Collector to Base Voltage
SYMBOL
VCBO
RATING
UNIT
V
160
Collector to Emitter Voltage
Emitter to Base Voltage
VCEO
140
V
VEBO
6
0.6
V
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
IC
A
PC
0.625
W
°C
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
SYMBOL MIN
TYP
MAX UNIT
TEST CONDITION
IC=100µA, IE = 0A
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
160
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
140
-
V
IC=1mA, IB = 0A
6
-
V
IE=10µA, IC = 0A
-
-
0.1
0.05
-
µA
µA
VCB=100V, IE = 0 A
VEB=4 V, IC =0 mA
VCE=5V, IC=1mA
Emitter Cut-Off Current
IEBO
hFE1
60
60
20
-
DC Current Gain
hFE2
250
-
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCB = 10V, IE = 0A, f=1MHz
hFE3
0.15
0.25
1
V
V
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
VCE(sat)
VBE(sat)
-
-
V
-
1.2
6
V
Collector Output Capacitance
Transition Frequency
Cob
fT
-
pF
100
300
MHz VCE = 10V, IC = 10mA, f=100MHz
VCE =5V, IC = 0.25mA,
Noise Figure
NF
-
-
10
dB
f=1KHz, RS=1kΩ
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
8-Mar-2010 Rev. A
Page 1 of 2
2N5550
0.6 A, 160 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
8-Mar-2010 Rev. A
Page 2 of 2
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