2N5400 [SECOS]
PNP Plastic Encapsulated Transistor; PNP塑料封装晶体管
| 型号： | 2N5400 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | PNP Plastic Encapsulated Transistor |
| 文件： | 总2页 (文件大小：376K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5400
-0.6 A, -130 V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Switching and amplification in high voltage
Applications such as telephony
Low current(max.600mA)
High voltage(max.130V)
TO-92
G
H
Emitter
Base
Collector
J
A
D
Millimeter
REF.
Min.
4.40
4.30
12.70
3.30
0.36
0.36
Max.
4.70
4.70
-
B
A
B
C
D
E
F
Collector
K
3.81
0.56
0.51
Base
E
C
F
G
H
J
1.27 TYP.
1.10
2.42
0.36
-
2.66
0.76
Emitter
K
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
VCBO
VCEO
VEBO
IC
-130
-120
V
V
-5
V
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
-600
mA
mW
°C
PC
625
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Condition
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-130
-120
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
IC=-100μA, IE = 0A
IC=-1mA, IB = 0A
-
V
IE=-10μA, IC = 0A
-0.1
-0.1
-
μA
μA
VCB=-100V, IE = 0 A
VEB=-3V, IC =0 mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCB = -10V, IE = 0A, f=1MHz
Emitter Cut-Off Current
IEBO
-
hFE1
30
40
40
--
DC Current Gain
hFE2
180
-
hFE3
-0.2
-0.5
-1
-1
6
V
V
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
VCE(sat)
VBE(sat)
--
--
V
--
V
Collector Output Capacitance
Transition Frequency
Cob
fT
-
pF
100
-
MHz VCE = -10V, IC = -10mA, f=30MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Dec-2010 Rev. A
Page 1 of 2
2N5400
-0.6 A, -130 V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Dec-2010 Rev. A
Page 2 of 2
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