2N4126 [SECOS]

PNP Plastic Encapsulated Transistor; PNP塑料封装晶体管


型号：	2N4126
厂家：	SECOS HALBLEITERTECHNOLOGIE GMBH
描述：	PNP Plastic Encapsulated Transistor PNP塑料封装晶体管晶体晶体管
文件：	总1页 (文件大小：114K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2N4126

-0.2 A, -25 V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

TO-92



PNP Silicon Epitaxial Transistor for Switching and Amplifier

Applications.



Complementary of the 2N4124

 Emitter

 Base

 Collector

Millimeter

REF.

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

0.51

Collector





Base

1.27 TYP.

1.10

2.42

0.36



Emitter

2.66

0.76

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-25

Collector to Emitter Voltage

Emitter to Base Voltage

-25

-4

-0.2

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance Junction to Ambient

Junction, Storage Temperature

P_C

625

°C / W

°C

R_θJA

T_J, T_STG

200

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Test Condition

Collector to Base Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-25

I_C= -0.01mA, I_E= 0A

Collector to Emitter

Breakdown Voltage

-25

I_C=-1mA, I_B= 0A

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

-4

I_E= -0.01mA, I_C= 0A

V_CB=- 20V, I_E= 0 A

V_EB= -3V, I_C= 0 mA

V_CE= -1V, I_C= -2 mA

V_CE= -1V, I_C=-50mA

-50

360

I_EBO

h_{FE (1)}

120

DC Current Gain

h_{FE (2)}

Collector to Emitter Saturation Voltage

V_CE(sat)

-0.4

I_C=-50mA, I_B=-5mA

Base to Emitter Saturation Voltage

Collector output Capacitance

Transition Frequency

V_BE(sat)

C_ob

-0.95

4.5

I_C=-50mA, I_B=-5mA

V_CB= -5V, I_E= 0A, f=1MHz

V_CE= -20V, I_C= -10mA,

f_T

250

MHz

f=100MHz

*Pulse test：pulse width ≦ 300s, duty cycle ≦ 1.5%.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

29-Dec-2010 Rev. A

Page 1 of 1

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