2N4124 [SECOS]
NPN Plastic Encapsulated Transistor; NPN塑料封装晶体管
| 型号： | 2N4124 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic Encapsulated Transistor |
| 文件： | 总1页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N4124
0.2 A, 30 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
High DC Current Gain
High Transition Frequency
G
H
Emitter
Base
Collector
J
A
D
B
Collector
Millimeter
REF.
Min.
4.40
4.30
12.70
3.30
0.36
0.36
Max.
4.70
4.70
-
3.81
0.56
0.51
K
A
B
C
D
E
F
Base
E
C
F
G
H
J
1.27 TYP.
1.10
2.42
0.36
-
Emitter
2.66
0.76
K
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
VCEO
VEBO
IC
30
V
Collector to Emitter Voltage
Emitter to Base Voltage
25
V
5
0.2
V
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
A
PC
350
mW
°C / W
°C
RθJA
TJ, TSTG
357
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Condition
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
30
25
5
-
-
-
-
-
-
-
-
V
IC= 0.01mA, IE = 0A
-
V
IC=1mA, IB = 0A
-
V
IE= 0.01mA, IC = 0A
VCB= 20V, IE = 0 A
VEB= 3V, IC = 0 mA
VCE= 1V, IC= 2 mA
VCE= 1V, IC=50mA
-
50
50
360
-
nA
nA
Emitter Cut-Off Current
IEBO
-
hFE (1)
120
60
DC Current Gain
hFE (2)
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
VCE(sat)
VBE(sat)
-
-
-
-
0.3
V
IC=50mA, IB=5mA
0.95
V
IC=50mA, IB=5mA
Collector output Capacitance
Transition Frequency
Cob
fT
-
-
-
4
-
pF
VCB = 5V, IE = 0A, f=1MHz
300
MHz VCE = 20V, IC = 10mA, f=100MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Dec-2010 Rev. A
Page 1 of 1
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