2N3906 [SECOS]
PNP Silicon General Purpose Transistor; PNP硅通用晶体管
| 型号： | 2N3906 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | PNP Silicon General Purpose Transistor |
| 文件： | 总3页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3906
PNP Silicon
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
COLLECTOR
3
2
BASE
ƔFEATURES
.
.
.
Power Dissipation
1
1
EMITTER
P
CM: 625 mW (Ta=25к)
2
3
Collector Current
I
CM: -200 mA
Collector - Base Voltage
V
(BR)CBO: -40 V
ƔELECTRICAL CHARACTERISTICS (TA = 25 к unless otherwise specified)
Parameter
Collector - Emitter Breakdown Voltage
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cut-Off Current
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
TEST CONDITIONS
IC = -1 mA, IB = 0 A
IC = -100 µA, IE = 0 A
IE = -100 µA, IC = 0 A
VCB = -40 V, IE = 0 A
VCE = -40 V, IB = 0 A
VEB = -5 V, IC = 0 A
VCE = -1 V, IC = -10 mA
VCE = -1 V, IC = -50 mA
IC = -50 mA, IB = -5 mA
IC = -50 mA, IB = -5 mA
VCE = -20 V, IC = -10 mA
f = 100 MHz
Min.
-40
-40
-5
-
Typ.
Max.
-
-
UNIT
-
-
-
-
-
-
-
-
-
-
V
V
V
-
-0.1
-0.1
-0.1
400
-
µA
Collector Cut-Off Current
ICEO
-
Emitter Cut-Off Current
IEBO
-
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
100
60
-
DC Current Gain
-
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
0.3
-0.95
V
V
-
Transition Frequency
fT
250
-
-
MHz
к
Operating and Storage Junction Temperature Range
TJ, TSTG
-
-55 ~ +150
ƔCLASSIFICATION OF hFE(1)
Rank
Rang
O
Y
G
100 ~ 200
200 ~ 300
300 ~ 400
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
2N3906
PNP Silicon
General Purpose Transistor
Elektronische Bauelemente
ƔTYPICAL CHARACTERISTICS
3 V
3 V
< 1 ns
+9.1 V
275
C
275
< 1 ns
+0.5 V
10 k
10 k
0
< 4 pF*
C < 4 pF*
S
S
10.6 V
300 ns
DUTY CYCLE = 2%
10 < t < 500 ms
1
t
1
10.9 V
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Delay and Rise Time
Equivalent Test Circuit
Storage and Fall Time
Equivalent Test Circuit
2.0
1.0
T = +125°C
J
V
CE
= 1.0 V
+25°C
0.7
0.5
-ā55°C
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
I , COLLECTOR CURRENT (mA)
C
DC Current Gain
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 3
2N3906
PNP Silicon
General Purpose Transistor
Elektronische Bauelemente
1.0
0.8
0.6
0.4
T = 25°C
J
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Collector Saturation Region
1.0
0.8
0.6
1.0
0.5
T = 25°C
V
@ I /I = 10
J
BE(sat) C B
+25°C TO +125°C
-ā55°C TO +25°C
q
FOR V
CE(sat)
VC
V
BE
@ V = 1.0 V
CE
0
-ā0.5
-ā1.0
+25°C TO +125°C
-ā55°C TO +25°C
0.4
0.2
0
V
CE(sat)
@ I /I = 10
C B
q
FOR V
BE(sat)
VB
-ā1.5
-ā2.0
1.0
2.0 5.0
10
20
50
100
200
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
“ON” Voltages
Temperature Coefficients
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 3
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