1N4148W [SECOS]
Surface Mount Fast Switching Diode; 表面装载快速开关二极管
| 型号： | 1N4148W |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Surface Mount Fast Switching Diode |
| 文件： | 总2页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4148W
Surface Mount Fast Switching Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOD-123
DESCRIPTION
D
z
z
z
z
z
Fast switching speed
Ultra-Small surface mount package
For general purpose switching applications
High conductance
1
Cathode Band
H
G
Also available in lead-free version
2
F
MECHANICAL DATA
z
z
z
z
z
z
Case: SOD-123, Plastic
C
B
A
J
E
Epoxy: UL 94V-0 rate flame retardant
Metallurgically bonded construction
Polarity: Color band denotes cathode end
Mounting position: Any
Millimeter
Millimeter
REF.
REF.
Min.
1.05
Max.
Min.
Max.
1.70
2.80
3.85
Weight: 0.0094 grams
A
B
C
D
1.25
F
G
H
J
1.50
2.60
3.55
0.10 REF.
1.05
0.45
1.15
0.65
0.50 REF.
MARKING
E
0.08
0.15
T4
ABSOLUTE MAXIMUM RATINGS
(at Ta = 25°C unless otherwise specified, single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.)
Parameter
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRM
Value
Unit
100
V
VRRM
VRWM
VR
75
V
RMS Reverse Voltage
VR(RMS)
IFM
53
V
Forward Continuous Current
Average Rectified Output Current
300
150
mA
mA
IO
2.0
1.0
@ t = 1.0µs
@ t = 1.0s
Non-Repetitive Peak Forward Surge Current
IFSM
A
Power Dissipation (Note 1)
PD
RθJA
400
318
mW
℃ / W
℃
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Temperature, Storage Temperature
TJ, TSTG
-65 ~ 150
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Symbol Min. Max.
Unit
Test Conditions
Reverse Breakdown Voltage
VRM
75
-
V
IR = 1.0µA
0.715
0.855
1.0
IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
Forward Voltage (Note 2)
VFM
-
V
1.25
VR = 75V
2.5
50
30
25
µA
µA
µA
nA
VR = 75V, TJ = 150 °C
VR = 25V, TJ = 150 °C
VR = 20V
Peak Reverse Current (Note 2)
IRM
-
-
Total Capacitance
CT
tRR
2.0
4.0
pF
nS
VR = 0, f = 1.0 MHz
IF = IR = 10mA,
Irr = 0.1x IR, RL = 100 Ω
Reverse Recovery Time
NOTES:
1. Part mounted on FR-4 PC board with recommended pad layout
2. Short duration test pulse used to minimize self-heating effect.
01-Jun-2004 Rev. B
Page 1 of 2
1N4148W
Surface Mount Fast Switching Diode
Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES (1N4148W)
300
1000
100
10
200
1.0
100
0.1
0
0.01
50
0
75
100
150
25
125
0
1
2
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Forward Characteristics
10,000
1000
100
10
1
VR = 20V
0
100
200
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 Leakage Current vs Junction Temperature
01-Jun-2004 Rev. B
Page 2 of 2
相关型号：
1N4148W-E3-18
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
VISHAY
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