TIP121 [SAVANTIC]

Silicon NPN Darlington Power Transistors; 硅NPN达林顿功率晶体管
TIP121
型号: TIP121
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Darlington Power Transistors
硅NPN达林顿功率晶体管

晶体 晶体管
文件: 总4页 (文件大小:127K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Darlington Power Transistors  
TIP120/121/122  
DESCRIPTION  
·With TO-220C package  
·DARLINGTON  
·High DC current gain  
·Low collector saturation voltage  
·Complement to type TIP125/126/127  
APPLICATIONS  
·Designed for general–purpose amplifier  
and low–speed switching applications.  
PINNING  
PIN  
DESCRIPTION  
1
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
ABSOLUTE MAXIMUM RATINGS (Tc=25ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
60  
UNIT  
TIP120  
TIP121  
TIP122  
TIP120  
TIP121  
TIP122  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
100  
60  
VCEO  
Collector-emitter voltage  
Open base  
V
80  
100  
5
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current-DC  
Collector current-Pulse  
Base current-DC  
Open collector  
V
A
5
8
A
120  
65  
mA  
TC=25ꢀ  
Ta=25ꢀ  
PC  
Collector power dissipation  
W
2
Tj  
Junction temperature  
Storage temperature  
150  
-65~150  
Tstg  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Darlington Power Transistors  
TIP120/121/122  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE(  
PARAMETER  
CONDITIONS  
MIN  
60  
TYP.  
MAX  
UNIT  
TIP120  
TIP121  
TIP122  
Collector-emitter  
sustaining voltage  
IC=0.1A, IB=0  
V
80  
100  
Collector-emitter saturation voltage IC=3A ,IB=12mA  
Collector-emitter saturation voltage IC=5A ,IB=20mA  
2.0  
4.0  
2.5  
V
V
V
)-1  
sat  
VCE(  
)-2  
sat  
VBE  
Base-emitter on voltage  
IC=3.0A ; VCE=3V  
VCB=60V, IE=0  
VCB=80V, IE=0  
TIP120  
TIP121  
TIP122  
TIP120  
TIP121  
TIP122  
Collector  
ICBO  
0.2  
mA  
cut-off current  
V
CB=100V, IE=0  
VCE=30V, IB=0  
VCE=40V, IB=0  
Collector  
ICEO  
0.5  
2
mA  
mA  
cut-off current  
V
CE=50V, IB=0  
IEBO  
hFE-1  
hFE-2  
Cob  
Emitter cut-off current  
DC current gain  
VEB=5V; IC=0  
IC=0.5A ; VCE=3V  
IC=3.0A ; VCE=3V  
IE=0 ; VCB=10V,f=0.1MHz  
1000  
1000  
DC current gain  
Output capacitance  
200  
pF  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Darlington Power Transistors  
TIP120/121/122  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)  
3
SavantIC Semiconductor  
Product Specification  
Silicon NPN Darlington Power Transistors  
TIP120/121/122  
4

相关型号:

TIP121(TO-220)

Transistor
JCST

TIP121-6200

8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
RENESAS

TIP121-6203

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP121-6226

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP121-6255

8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
RENESAS

TIP121-6263

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP121-6264

8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
RENESAS

TIP121-6265

8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
RENESAS

TIP121-DR6259

8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
RENESAS

TIP121-DR6269

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP121-DR6274

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP121-DR6280

8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
RENESAS