C5297 [SAVANTIC]
Silicon NPN Power Transistors;
| 型号： | C5297 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5297
DESCRIPTION
·With TO-3PML package
·High breakdown voltage, high reliability.
·High speed
APPLICATIONS
·Ultrahigh-definition CRT display
·Horizontal deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
ABSOLUTE MAXIMUM RATINGS(TC=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
1500
Open base
800
V
Open collector
6
V
8
16
A
ICM
Collector current-peak
A
TC=25ꢀ
60
W
W
ꢀ
PC
Collector power dissipation
3
Junction temperature
Storage temperature
150
-55~150
Tj
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5297
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
5.0
UNIT
V
Collector-emitter saturation voltage IC=5A;IB=1.25 A
VCE
VBE
(sat)
Base-emitter saturation voltage
IC=5A;IB=1.25 A
1.5
V
(sat)
VCEO(SUS)
Collector-emitter sustaining voltage IC=100mA;IB=0
800
V
IEBO
Emitter cut-off current
Collector cut-off current
Collector cut-off current
DC current gain
VEB=4V ;IC=0
1.0
10
1
mA
µA
mA
ICBO
VCB=800V; IE=0
VCE=1500V; RBE=0
IC=1 A ; VCE=5V
IC=5A ; VCE=5V
ICES
hFE-1
20
4
30
7
hFE-2
DC current gain
Switching times
Storage time
3.0
0.2
µs
µs
tstg
IC=4A;RL=50Ω
IB1=0.8A; IB2=-1.6A
VCC=200V
tf
Fall time
0.1
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5297
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5297
4
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