2SD718 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD718 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD718
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SB688
APPLICATIONS
·Power amplifier applications
·Recommend for 45~50W audio frequency
amplifier output stage
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3P(I)) and symbol
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
CONDITIONS
Open emitter
VALUE
120
120
5
UNIT
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
V
Open collector
V
8
A
IB
Base current
0.8
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
80
W
ꢀ
Tj
150
-55~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD718
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Base-emitter breakdown voltage
IC=50mA ,IB=0
120
Collector-emitter saturation voltage IC=5A; IB=0.5A
2.5
1.5
10
V
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=5A ; VCE=5V
VCB=120V; IE=0
VEB=5V; IC=0
V
ICBO
µA
µA
IEBO
10
hFE
IC=1A ; VCE=5V
IC=1A ; VCE=5V
IE=0 ; VCB=10V ;f=1MHz
55
160
fT
Transition frequency
Output capacitance
12
MHz
pF
Cob
170
ꢀ hFE Classifications
R
O
55-110
80-160
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD718
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD718
4
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