2SD665 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD665 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD665
DESCRIPTION
·With TO-3 package
·Complement to type 2SB645
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Power switching applications
·DC-DC converters
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
200
200
5
UNIT
V
Open base
V
Open collector
V
15
A
IB
Base current
4
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
150
150
-55~150
W
ꢀ
Tj
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD665
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
Collector-emitter breakdown voltage IC=25mA ;IB=0
200
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=10A; IB=1A
2.0
2.5
0.1
0.1
140
V
V
IC=10A; IB=1A
VCB=200V; IE=0
VEB=5V; IC=0
mA
mA
IEBO
hFE
IC=1A ; VCE=5V
IE=0 ; VCB=10V;f=1.0MHz
IC=1A ; VCE=5V
40
COB
Output capacitance
300
15
pF
fT
Transition frequency
MHz
ꢀ hFE Classifications
O
R
40-80
70-140
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD665
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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