2SD1885 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1885 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1885
DESCRIPTION
·With TO-3PML package
·High breakdown voltage
·High reliability
·High speed
APPLICATIONS
·Color TV horizontal deflection output.
·Color display horizontal deflection output.
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
1500
800
6
UNIT
Open emitter
Open base
V
V
V
A
A
Open collector
6
ICM
Collector current-peak
20
3.0
PC
Collector power dissipation
W
TC=25ꢀ
60
Tj
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1885
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEsat
VBEsat
VCEO(SUS)
IEBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
5
UNIT
V
Collector-emitter saturation voltage IC=5A;IB=1 A
Base-emitter saturation voltage
IC=5A;IB=1 A
1.5
V
Collector-emitter sustaining voltage IC=100mA;IB=0
800
V
Emitter cut-off current
Collector cut-off current
Collector cut-off current
DC current gain
VEB=4V; IC=0
1
10
1
mA
µA
mA
ICBO
VCB=800V; IE=0
VCE=1500V; RBE=0
IC=1 A ; VCE=5V
IC=5A ; VCE=5V
ICES
hFE-1
8
5
hFE-2
DC current gain
10
IC=4A;RL=50Ω; IB1=0.8A
IB2=-1.6AVCC=200V
tf
Fall time
0.1
0.3
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1885
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1885
4
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