2SD1267A [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SD1267A
型号: 2SD1267A
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总4页 (文件大小:137K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1267 2SD1267A  
DESCRIPTION  
·With TO-220Fa package  
·High forward current transfer ratio hFE  
which has satisfactory linearity  
·Low collector saturation voltage  
·Complement to type 2SB942/942A  
APPLICATIONS  
·For power amplification  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
3
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2SD1267  
2SD1267A  
2SD1267  
2SD1267A  
60  
VCBO  
Collector-base voltage  
Open emitter  
V
V
80  
60  
VCEO  
Collector-emitter voltage  
Open base  
80  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
A
4
ICM  
Collector current-peak  
8
2
Ta=25ꢀ  
TC=25ꢀ  
PC  
Collector power dissipation  
W
40  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1267 2SD1267A  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
60  
TYP.  
MAX  
UNIT  
2SD1267  
Collector-emitter  
breakdown voltage  
V(BR)CEO  
IC=30mA ,IB=0  
V
2SD1267A  
80  
VCEsat  
VBE  
Collector-emitter saturation voltage IC=4A, IB=0.4A  
1.5  
2.0  
1.0  
V
V
Base-emitter voltage  
Emitter cut-off current  
IC=3A ; VCE=4V  
VEB=5V; IC=0  
IEBO  
mA  
2SD1267  
2SD1267A  
2SD1267  
2SD1267A  
VCE=30V; IB=0  
Collector  
cut-off current  
ICEO  
0.7  
mA  
mA  
VCE=60V; IB=0  
VCE=60V; VBE=0  
VCE=80V; VBE=0  
IC=1A ; VCE=4V  
IC=3A ; VCE=4V  
IC=0.5A; VCE=5V,f=1MHz  
Collector  
cut-off current  
ICES  
0.4  
hFE-1  
hFE-2  
fT  
DC current gain  
DC current gain  
Transition frequency  
70  
15  
250  
20  
MHz  
Switching times  
ton  
tstg  
tf  
Turn-on time  
0.4  
1.5  
0.5  
µs  
µs  
µs  
IC=4A;IB1=-IB2=0.4A  
VCC=50V  
Storage time  
Fall time  
hFE-1 Classifications  
Q
P
70-150  
120-250  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1267 2SD1267A  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)  
3
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1267 2SD1267A  
4

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