2SD1235 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2SD1235 |
厂家: | Savantic, Inc. |
描述: | Silicon NPN Power Transistors |
文件: | 总4页 (文件大小:159K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1235
DESCRIPTION
·With TO-220C package
·Complement to type 2SB919
·Low collector saturation voltage
·Large current capacity.
APPLICATIONS
·Large current switching of relay drivers,
high-speed inverters,converters
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
VALUE
60
UNIT
Open emitter
Open base
V
V
V
A
A
30
Open collector
6
Collector current (DC)
Collector current-peak
8
ICM
15
TC=25ꢀ
30
PC
Collector dissipation
W
1.75
150
-55~150
Tj
Junction temperature
Storage temperature
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1235
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
ICBO
PARAMETER
CONDITIONS
MIN
30
60
6
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=1mA ;RBE=∞
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=1mA ;IE=0
V
IE=1mA; IC=0
IC=3A; IB=0.15A
VCB=40V; IE=0
VEB=4V; IC=0
V
0.4
100
100
280
V
µA
µA
IEBO
hFE-1
DC current gain
IC=1A ; VCE=2V
IC=4A ; VCE=2V
IC=1A ; VCE=5V
70
30
hFE-2
DC current gain
fT
Transition frequency
120
MHz
Switching times
ton Turn-on time
ts
0.1
0.5
µs
µs
µs
IC=20IB1=-20IB2=4A
VCC=10V,RL=2.5Ω
Storage time
Fall time
tf
0.03
ꢀ hFE-1 Classifications
Q
R
S
70-140
100-200 140-280
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1235
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1235
4
相关型号:
©2020 ICPDF网 联系我们和版权申明