2SD1213 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1213 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1213
DESCRIPTION
·With TO-3PN package
·Low collector saturation voltage
·Large current capacity.
·Complement to type 2SB904
APPLICATIONS
·Large current switching of relay drivers,
high-speed inverters, converters.
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings (Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
VALUE
60
UNIT
V
V
V
A
A
Open base
30
Open collector
6
Collector current (DC)
Collector current (Pulse)
20
ICP
30
TC=25ꢀ
Ta=25ꢀ
60
PC
Collector power dissipation
W
2.5
Tj
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1213
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
ICBO
PARAMETER
CONDITIONS
MIN
30
60
6
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=1mA ;RBE=∞
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=1mA; IE=0
IE=1mA; IC=0
IC=8A; IB=0.4A
VCB=40V; IE=0
VEB=4V; IC=0
V
V
0.4
0.1
0.1
280
V
mA
mA
IEBO
hFE-1
DC current gain
IC=1A ; VCE=2V
IC=10A ; VCE=2V
IC=1A ; VCE=5V
70
30
hFE-2
DC current gain
fT
Transition frequency
120
MHz
Switching times
ton Turn-on time
ts
0.3
0.6
µs
µs
µs
IC=10A;IB1=-IB2=-0.5A
Storage time
Fall time
VCC=10V ;RL=1Ω
tf
0.02
ꢀ hFE-1 Classifications
Q
R
S
70-140
100-200 140-280
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1213
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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