2SC5002 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC5002 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5002
DESCRIPTION
·With TO-3PML package
·High voltage switching
APPLICATIONS
·Display horizontal deflection output;
switching regulator general purpose
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
1500
800
6
UNIT
V
Open base
V
Open collector
V
7
A
ICM
Collector current-peak
Base current
14
A
IB
3.5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
80
W
ꢀ
Tj
150
-55~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5002
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO1
ICBO2
IEBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=10mA; IB=0
800
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=5A;IB=1.2A
5
V
IC=5A;IB=1.2A
1.5
100
1
V
VCB=1200V ;IE=0
VCB=1500V; IE=0
VEB=6V; IC=0
µA
mA
µA
100
hFE-1
IC=1A ; VCE=5V
IC=5A ; VCE=5V
IE=-0.5A ; VCE=12V
VCB=10V;f=1MHz
8
4
hFE-2
DC current gain
9
fT
Transition frequency
4
MHz
pF
COB
Output capacitance
100
Switching times
tstg Storage time
tf Fall time
4.0
0.2
µs
µs
IC=4A;IB1=0.8A;
IB2=-1.6A;RL=50Ω
VCC=200V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5002
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5002
4
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