2SC4923 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC4923 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4923
DESCRIPTION
·With TO-3PML package
·High speed
·High reliability
·High breakdown voltage
APPLICATIONS
·High-definition CRT display horizontal
deflection output applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
1500
V
V
V
A
A
Open base
800
Open collector
6
8
25
ICP
Collector current-peak
3
PC
Collector power dissipation
W
TC=25ꢀ
70
Tj
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4923
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
ICBO
PARAMETER
Collector-emitter sustaining voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
IC=100mA ;IB=0
MIN
TYP. MAX UNIT
800
V
VCE=800V; IE=0
10
1.0
1.0
µA
mA
mA
ICES
VEB=1500V; RBE=0
VCE=4V; IC=0
IEBO
hFE-1
IC=1A ; VCE=5V
8
4
hFE-2
DC current gain
IC=6A ; VCE=5V
8
5
VCE(sat)
VBE(sat)
tstg
Collector-emitter saturation voltage
Base-emitter saturation voltage
Storage time
IC=6A ; IB=1.5A
V
V
IC=6A ; IB=1.5A
1.5
3
IC=6A; IB1=1.2A;IB2=-2.4A
IC=6A; IB1=1.2A;IB2=-2.4A
µs
µs
tf
Fall time
0.1
0.2
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4923
PACKAGE OUTLINE
Fig.2 outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4923
4
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