2SC4769 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC4769 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4769
DESCRIPTION
·With TO-3PML package
·High breakdown voltage, high reliability.
·High speed
·Built-in damper diode
APPLICATIONS
·Ultrahigh-definition color display
·Horizontal deflection output applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings(Tc=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
1500
V
V
V
A
A
Open base
800
Open collector
6
7
16
ICM
Collector current-peak
TC=25ꢀ
60
PC
Collector power dissipation
W
3
Tj
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4769
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEsat
VBEsat
VCEO(SUS)
IEBO
PARAMETER
Collector-emitter saturation voltage IC=5A;IB=1.7 A
Base-emitter saturation voltage IC=5A;IB=1.7 A
Collector-emitter sustaining voltage IC=100mA;IB=0
CONDITIONS
MIN
TYP.
MAX
5
UNIT
V
1.5
V
800
40
V
Emitter cut-off current
Collector cut-off current
Collector cut-off current
DC current gain
VEB=4V; IC=0
VCB=800V; IE=0
VCE=1500V; RBE=0
IC=1 A ; VCE=5V
IC=5A ; VCE=5V
IEC=7A
130
10
1
mA
µA
mA
ICBO
ICES
hFE-1
8
3
hFE-2
DC current gain
8
VF
Diode forward voltage
2.0
V
Switching times
tstg Storage time
tf Fall time
3.0
0.2
µs
µs
IC=4A;RL=33.3Ω
IB1=0.8A;- IB2=1.6A
VCC=200V
0.1
ꢀ hFE-2 classifications
1
2
3
3-5
4-6
5-8
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4769
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4769
4
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