2SC4507 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC4507 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4507
DESCRIPTION
·With TO-220F package
·High breakdown voltage
·High speed switching performance
APPLICATIONS
·For switching regulator and general
purpose power amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
3
Absolute maximum ratings (Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
500
400
7
UNIT
V
Open emitter
Open base
V
Open collector
V
5
A
PC
Collector dissipation
Junction temperature
Storage temperature
TC=25ꢀ
40
W
ꢀ
Tj
150
-55~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4507
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)CBO
V(BR)EBO
VCEsat
PARAMETER
Collector-emitter sustainig voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
400
500
7
TYP.
MAX
UNIT
V
IC=100mA ; IB=0
IC=1mA ; IE=0
IE=1mA ; IC=0
IC=2A ;IB=0.4A
IC=2A ;IB=0.4A
VCB=450V; IE=0
VEB=7V; IC=0
V
V
0.8
1.2
100
100
65
V
VBEsat
V
ICBO
µA
µA
IEBO
Emitter cut-off current
hFE-1
DC current gain
IC=0.5A ; VCE=5V
IC=2A ; VCE=5V
25
20
hFE-2
DC current gain
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4507
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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