2SC3456 [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SC3456
型号: 2SC3456
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总4页 (文件大小:168K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3456  
DESCRIPTION  
·With TO-220C package  
·High breakdown voltage and high reliability  
·Fast switching speed.  
·Wide ASOarea of safe operation ꢀ  
APPLICATIONS  
·800V/1.5A switching regulator applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
1100  
800  
7
UNIT  
V
V
V
A
A
A
W
Open base  
Open collector  
1.5  
ICM  
Collector current-peak  
Base current  
5
IB  
0.8  
PC  
Collector dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
40  
Tj  
150  
-55~150  
Tstg  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3456  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
VCEsat  
VBEsat  
ICBO  
PARAMETER  
CONDITIONS  
MIN  
800  
1100  
7
TYP.  
MAX  
UNIT  
V
Collector-emitter breakdown voltage IC=5mA ; RBE=  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector cut-off current  
Emitter cut-off current  
IC=1mA ; IE=0  
V
IE=1mA ; IC=0  
V
IC=0.75A; IB=0.15A  
IC=0.75A; IB=0.15A  
VCB=800V ;IE=0  
VEB=5V; IC=0  
2.0  
1.5  
10  
V
V
µA  
µA  
IEBO  
10  
hFE-1  
DC current gain  
IC=0.1A ; VCE=5V  
IC=0.5A ; VCE=5V  
IC=0.1A ; VCE=10V  
f=1MHz ; VCB=10V  
10  
8
40  
hFE-2  
DC current gain  
fT  
Transition frequency  
15  
35  
MHz  
pF  
COB  
Output capacitance  
Switching times  
ton  
tstg  
tf  
Turn-on time  
0.5  
3.0  
0.3  
µs  
µs  
µs  
V
CC=400V; IC=1A  
IB1=0.2A;IB2=-0.4A;  
RL=400Ω  
Storage time  
Fall time  
hFE-1 classifications  
K
L
M
10-20  
15-30  
20-40  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3456  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)  
3
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3456  
4

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