2SC3117 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC3117 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3117
DESCRIPTION
·With TO-126 package
·Complement to type 2SA1249
·High breakdown voltage
·Large current capacity
APPLICATIONS
·Color TV sound output;converters;
Inverters’ applications
·160V/1.5A switching applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
CONDITIONS
Open emitter
VALUE
180
160
6
UNIT
Collector-base voltage
V
V
V
A
A
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
Open collector
1.5
ICM
Collector current-peak
2.5
Ta=25ꢀ
TC=25ꢀ
1.0
PC
Collector power dissipation
W
10
Tj
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3117
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
160
180
6
MAX
UNIT
V
Collector-emitter breakdown voltage IC=1mA; RBE=∞
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=10µA; IE=0
V
IE=10µA ; IC=0
V
IC=500mA; IB=50mA
IC=500mA; IB=50mA
VCB=120V; IE=0
0.13
0.85
0.45
1.2
V
V
1.0
µA
µA
IEBO
VEB=4V; IC=0
1.0
hFE-1
DC current gain
IC=100mA ; VCE=5V
IC=10mA ; VCE=5V
IC=50mA ; VCE=10V
IE=0 ; VCB=10V;f=1MHz
100
90
400
hFE-2
DC current gain
fT
Transition frequency
120
22
MHz
pF
Cob
Output capacitance
ꢀ hFE-1 Classifications
R
S
T
100-200
140-280
200-400
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3117
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3117
4
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