2SC2809 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2SC2809 |
厂家: | Savantic, Inc. |
描述: | Silicon NPN Power Transistors |
文件: | 总3页 (文件大小:135K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2809
DESCRIPTION
·With TO-3PN package
·High speed switching
·High breakdown voltage
·Wide area of safe operation
APPLICATIONS
·For power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
V
Open emitter
Open base
300
300
V
Open collector
6
V
2
4
A
ICM
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
A
PC
TC=25ꢀ
50
W
ꢀ
150
-55~150
Tj
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2809
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
PARAMETER
CONDITIONS
MIN
300
300
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=10mA ;IB=0
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=1mA ;IE=0
V
IC=1.5A; IB=0.3A
IC=1.5A; IB=0.3A
VCB=300V IE=0
VEB=6V; IC=0
1.0
1.5
V
VCE
VBE
(sat)
V
(sat)
ICBO
100
100
µA
µA
IEBO
hFE
fT
DC current gain
IC=0.3A ; VCE=4V
IC=0.3A ; VCE=12V
50
Transition frequency
20
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2809
PACKAGE OUTLINE
Fig.2 outline dimensions
3
相关型号:
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