2SC2681 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC2681 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2681
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SA1141
·High transition frequency
APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
115
115
5
UNIT
V
V
V
A
A
Open base
Open collector
10
ICM
Collector current-peak
15
TC=25ꢀ
Ta=25ꢀ
100
2
PC
Collector power dissipation
W
Tj
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2681
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEsat
VBE
PARAMETER
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
MIN
TYP.
0.6
MAX
1.5
2.0
50
UNIT
V
IC=4.5A ;IB=0.45A
IC=4.5A ; VCE=2V
VCB=80V; IE=0
1.2
V
ICBO
µA
µA
IEBO
VEB=5V; IC=0
50
hFE -1
hFE -2
COB
IC=1A ; VCE=2V
IC=4.5A ; VCE=2V
IE=0 ; VCB=10V;f=1MHz
IC=1A ; VCE=2V
60
40
200
DC current gain
Output capacitance
230
80
pF
fT
Transition frequency
MHz
ꢀ hFE-1 classifications
R
Q
60-120
100-200
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2681
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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