2SB1565 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SB1565 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1565
DESCRIPTION
·With TO-220F package
·Excellent DC current gain characteristics
·Low collector saturation voltage
·Wide SOA (safe operating area)
·Complement to type 2SD2394
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
MAX
-80
-60
-7
UNIT
V
V
V
A
A
Open base
Open collector
-3
ICM
Collector current-peak
-6
Ta=25ꢀ
TC=25ꢀ
2
PC
Collector dissipation
W
25
Tj
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1565
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
-60
-80
-7
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-1mA ;IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=-50µA ;IE=0
V
IE=-50µA ;IC=0
V
IC=-2A ;IB=-0.2A
IC=-2A ;IB=-0.2A
VCB=-60V; IE=0
-1.5
-1.5
-10
V
V
µA
µA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-10
hFE
DC current gain
IC=-0.5A ; VCE=-5V
IE=0 ; VCB=-10V;f=1MHz
IC=-0.5A ; VCE=-5V
100
320
COB
Output capacitance
50
15
pF
fT
Transition frequency
MHz
ꢀ hFE Classifications
E
F
100-200
160-320
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1565
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
2SB1565/D
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN
ROHM
2SB1565/DE
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN
ROHM
2SB1565/DF
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN
ROHM
2SB1565/EF
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN
ROHM
2SB1565C7
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN
ROHM
2SB1565C7/DE
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN
ROHM
2SB1565C7/F
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明