2SB1370 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SB1370 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1370
DESCRIPTION
·With TO-220Fa package
·PC=2W(Ta=25ꢀ) /30W(TC=25ꢀ)
·Low collector saturation voltage
·Wide area of safe operation
PINNING
PIN
1
DESCRIPTION
Emitter
2
Collector
Base
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
-60
UNIT
V
V
V
A
A
Open base
-60
Open collector
-5
-3
ICM
Collector current-peak
-6
Ta=25ꢀ
TC=25ꢀ
2.0
PC
Collector power dissipation
W
30
Tj
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1370
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
-60
-60
-5
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-1mA; IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=-50µA; IE=0
V
IE=-50µA; IC=0
V
IC=-2A ;IB=-0.2A
IC=-2A; IB=-0.2A
VCB=-60V; IE=0
VEB=-4V; IC=0
-1.5
-1.5
-10
V
V
µA
µA
IEBO
Emitter cut-off current
-10
hFE
DC current gain
IC=-0.5A ; VCE=-5V
IC=-0.5A; VCE=-5V
f=1MHz ; VCB=10V
100
320
fT
Transition frequency
15
80
MHz
pF
COB
Collector output capacitance
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1370
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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