2SA807 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA807 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA807
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·Complement to type 2SC1618
APPLICATIONS
·For power amplifier and general purpose
applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-60
UNIT
V
Open emitter
Open base
-60
V
Open collector
-6
V
-6
A
IB
Base current
-3
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
50
W
ꢀ
Tj
150
-65~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA807
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-50mA IB=0
-60
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-3A; IB=-0.3A
VCB=-60V; IE=0
VEB=-6V; IC=0
-1.5
-1.0
-1.0
V
mA
mA
IEBO
hFE
IC=-3A ; VCE=-4V
IC=-0.5A ; VCE=-12V
20
fT
Transition frequency
10
MHz
Switching times
tr
tstg
tf
Rise time
1.2
1.8
0.3
µs
µs
µs
V
CC=-10V;IC=-3A; RL=3Ω
Storage time
Fall time
IB1=-0.3A; IB2=50mA
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA807
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
相关型号：
2SA811
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, MINIMOLD PACKAGE-3
NEC
2SA811A-C17
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD PACKAGE-3
RENESAS
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