2N6594 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2N6594 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6594
DESCRIPTION
·With TO-3 package
·Complement to type 2N6569
·Wide area of safe operation
APPLICATIONS
·Designed for low voltage amplifier
power switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
-45
UNIT
V
Open base
-40
V
Open collector
-5
V
-12
A
ICM
Collector current-peak
Base current
-24
A
IB
-5
A
IE
Emitter current
-17
A
IEM
Emitter current-peak
Collector power dissipation
Junction temperature
Storage temperature
-34
A
PC
TC=25ꢀ
100
200
-65~200
W
ꢀ
Tj
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6594
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBEsat
ICEO
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=-0.1A ;IB=0
MIN
TYP.
MAX
UNIT
V
-40
IC=-4A; IB=-0.4A
IC=-12A; IB=-2.4A
IC=-4A; IB=-0.4A
VCE=-40V; IB=0
-1.5
-4.0
-2.0
-1.0
-1.0
-5.0
200
100
20
V
V
V
mA
mA
mA
ICBO
VCB=-45V; IE=0
IEBO
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-4A ; VCE=-3V
IC=-12A ; VCE=-4V
IC=-1.0A ; VCE=-4V;f=0.5MHz
15
5
hFE-2
DC current gain
fT
Transition frequency
1.5
MHz
Switching times
td
tr
Delay time
0.4
1.5
5.0
1.5
µs
µs
µs
µs
Rise time
Storage time
Fall time
IC=-2A; IB1=-IB2=-0.2A
VCC=-30V; tp=25µs;
Duty Cycle≤2.0%
tstg
tf
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
1.75
UNIT
ꢀ/W
Rth j-c
Thermal resistance junction to case
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6594
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
相关型号：
2N6594E3
Power Bipolar Transistor, 12A I(C), 40V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
MICROSEMI
2N6594LEADFREE
Power Bipolar Transistor, 12A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL
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