2N6499 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6499 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6499
DESCRIPTION
·With TO-220C package
·High breakdown voltage
APPLICATIONS
·Designed for high voltage inverters,
switching regulators and line operated
amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
CONDITIONS
VALUE
UNIT
Open emitter
Open base
450
V
V
V
A
A
A
W
ꢀ
350
Open collector
6
5
10
ICM
IB
2
PD
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
80
Tj
150
-65~150
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance from junction to case
1.56
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6499
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBEsat-1
VBEsat-2
ICEX
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=25mA ;IB=0
Collector-emitter saturation voltage IC=2.5A; IB=0.5A
Collector-emitter saturation voltage IC=5A ;IB=2A
350
1.5
5.0
1.5
2.5
V
V
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=2.5A; IB=0.5A
IC=5A ;IB=2A
V
V
VCE=450V;VBE=-1.5V
VCE=225V;VBE=-1.5V;TC=100ꢀ
1.0
10
mA
mA
IEBO
VEB=6V; IC=0
1.0
75
hFE-1
IC=2.5A ; VCE=10V
IC=5A ; VCE=10V
10
3
hFE-2
DC current gain
fT
Transition frequency
IC=250mA ; VCE=10V;f=1MHz
5.0
Switching times
tr
tstg
tf
Rise time
1.0
2.5
1.0
µs
µs
µs
IC=2.5A, IB1=-IB2=0.5A
VCC=125V
Storage time
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6499
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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