2N6473 [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2N6473
型号: 2N6473
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:94K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6473 2N6474  
DESCRIPTION  
·With TO-220 package  
·Low collector saturation voltage  
·Excellent safe operating area  
APPLICATIONS  
·General-purpose medium power for  
switching and amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
110  
130  
100  
120  
5
UNIT  
2N6473  
2N6474  
2N6473  
2N6474  
VCBO  
Collector-base voltage  
Open emitter  
Open base  
V
VCEO  
Collector-emitter voltage  
V
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
W
4
IB  
Base current  
2
PT  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
40  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-c  
Thermal resistance from junction to case  
3.125  
/W  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6473 2N6474  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
100  
120  
TYP.  
MAX  
UNIT  
2N6473  
2N6474  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
IC=0.1A ;IB=0  
V
VCEsat-1  
VCEsat-2  
VBE-1  
Collector-emitter saturation voltage  
Collector-emitter saturation voltage  
Base-emitter on voltage  
IC=1.5A;IB=0.15A  
IC=4A;IB=2A  
1.2  
2.5  
2.0  
3.5  
V
V
V
V
IC=1.5A ; VCE=4V  
IC=4A ; VCE=2.5V  
VBE-2  
Base-emitter on voltage  
VCE=100V;VBE=-1.5V  
TC=100ꢀ  
0.1  
2.0  
2N6473  
Collector cut-off current  
2N6474  
ICEX  
mA  
VCE=120V;VBE=-1.5V  
TC=100ꢀ  
0.1  
2.0  
2N6473  
Collector cut-off current  
2N6474  
VCE=50V;IB=0  
ICEO  
1.0  
mA  
mA  
VCE=60V;IB=0  
IEBO  
hFE-1  
hFE-2  
COB  
fT  
Emitter cut-off current  
DC current gain  
VEB=5V; IC=0  
1.0  
IC=1.5A ; VCE=4V  
IC=4A ; VCE=2.5V  
IE=0 ; VCB=10V;f=1MHz  
IC=0.5A ; VCE=4V  
15  
2
150  
DC current gain  
Output capacitance  
Transition frequency  
250  
pF  
4
MHz  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6473 2N6474  
PACKAGE OUTLINE  
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)  
3

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