2N6473 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2N6473 |
厂家: | Savantic, Inc. |
描述: | Silicon NPN Power Transistors |
文件: | 总3页 (文件大小:94K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6473 2N6474
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·General-purpose medium power for
switching and amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
110
130
100
120
5
UNIT
2N6473
2N6474
2N6473
2N6474
VCBO
Collector-base voltage
Open emitter
Open base
V
VCEO
Collector-emitter voltage
V
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
A
W
ꢀ
4
IB
Base current
2
PT
Tj
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
40
150
-65~150
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
3.125
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6473 2N6474
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
100
120
TYP.
MAX
UNIT
2N6473
2N6474
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A ;IB=0
V
VCEsat-1
VCEsat-2
VBE-1
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
IC=1.5A;IB=0.15A
IC=4A;IB=2A
1.2
2.5
2.0
3.5
V
V
V
V
IC=1.5A ; VCE=4V
IC=4A ; VCE=2.5V
VBE-2
Base-emitter on voltage
VCE=100V;VBE=-1.5V
TC=100ꢀ
0.1
2.0
2N6473
Collector cut-off current
2N6474
ICEX
mA
VCE=120V;VBE=-1.5V
TC=100ꢀ
0.1
2.0
2N6473
Collector cut-off current
2N6474
VCE=50V;IB=0
ICEO
1.0
mA
mA
VCE=60V;IB=0
IEBO
hFE-1
hFE-2
COB
fT
Emitter cut-off current
DC current gain
VEB=5V; IC=0
1.0
IC=1.5A ; VCE=4V
IC=4A ; VCE=2.5V
IE=0 ; VCB=10V;f=1MHz
IC=0.5A ; VCE=4V
15
2
150
DC current gain
Output capacitance
Transition frequency
250
pF
4
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6473 2N6474
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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