2N6291 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6291 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6291 2N6293
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Wide safe operating area
APPLICATIONS
·For medium power switching and
amplifier applications such as:series
and shunt regulators and driver and
output stages of high-fidelity amplifiers
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2N6291
2N6293
2N6291
2N6293
60
VCBO
Collector-base voltage
Open emitter
Open base
V
V
80
50
VCEO
Collector-emitter voltage
70
VEBO
IC
Emitter-base voltage
Collector current
Open collector
5
V
A
A
W
ꢀ
7
3
IB
Base current
PT
Tj
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
40
150
-65~150
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
3.125
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6291 2N6293
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
50
TYP.
MAX
UNIT
2N6291
2N6293
2N6291
2N6293
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A ;IB=0
V
70
IC=2.5A;IB=0.25A
IC=2A;IB=0.2A
Collector-emitter
saturation voltage
VCEsat-1
VCEsat-2
VBE-1
1.0
3.5
1.5
3.0
1.0
V
V
Collector-emitter saturation voltage IC=7A;IB=3A
2N6291
2N6293
IC=2.5A ; VCE=4V
Base-emitter
on voltage
V
IC=2A ; VCE=4V
IC=7A ; VCE=4V
VCE=40V; IB=0
VBE-2
Base-emitter on voltage
V
2N6291
2N6293
2N6291
2N6293
Collector
ICEO
mA
cut-off current
VCE=60V; IB=0
VCE=56V; VBE=-1.5V
CE=50V; BE=-1.5V,TC=150ꢀ
0.1
2.0
V
Collector
ICEX
IEBO
hFE-1
mA
mA
cut-off current
VCE=75V; VBE=-1.5V
VCE=70V; BE=-1.5V,TC=150ꢀ
0.1
2.0
Emitter cut-off current
DC current gain
VEB=5V; IC=0
1.0
2N6291
2N6293
IC=2.5A ; VCE=4V
IC=2A ; VCE=4V
30
150
hFE-2
COB
fT
DC current gain
IC=7A ; VCE=4V
2.3
Output capacitance
Transition frequency
IE=0 ; VCB=10V;f=1MHz
IC=0.5A ; VCE=4V;f=1MHz
250
pF
10
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6291 2N6293
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
相关型号：
2N6292
Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, NPN, Silicon, TO-220, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, 3 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明