2N5613 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2N5613 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5613 2N5615 2N5617 2N5619
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
-80
UNIT
2N5613
VCBO
Collector-base voltage
Open emitter
V
2N5615/5617
2N5619
-100
-120
-60
2N5613
VCEO
Collector-emitter voltage
Open base
Open collector
TC=25ꢀ
V
2N5615/5617
2N5619
-80
-100
-5
VEBO
IC
Emitter-base voltage
Collector current
V
A
W
ꢀ
-5
PD
Tj
Total power dissipation
Junction temperature
Storage temperature
50
150
Tstg
-65~150
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.5
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5613 2N5615 2N5617 2N5619
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-60
TYP.
MAX
UNIT
2N5613
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=-50mA ;IB=0
V
2N5615/5617
2N5619
-80
-100
VCEsat
Collector-emitter saturation voltage IC=-1A; IB=-0.1A
-0.5
-1.5
-0.1
-1.0
-0.1
200
90
V
VBE
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
IC=-2.5A ; VCE=-5V
VCB=Rated VCBO; IE=0
VCE= Rated VCEO,IB=0
VEB=-5V; IC=0
V
ICBO
ICEO
IEBO
mA
mA
mA
2N5613/5617
70
30
70
60
hFE
DC current gain
IC=-2.5A ; VCE=-5V
IC=-0.5A ; VCE=-10V
2N5615/5619
2N5613/5617
2N5615/5619
Transition
frequency
fT
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5613 2N5615 2N5617 2N5619
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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