2N5052 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N5052 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5050 2N5051 2N5052
DESCRIPTION
·With TO-66 package
·High breakdown voltage
·Excellent safe operating area
APPLICATIONS
·Designed for driver circuits,switching
and amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-66) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
125
150
200
125
150
200
7
UNIT
2N5050
2N5051
2N5052
2N5050
2N5051
2N5052
VCBO
Collector-base voltage
Open emitter
V
VCEO
Collector-emitter voltage
Open base
Open collector
TC=25ꢀ
V
VEBO
IC
Emitter-base voltage
Collector current
V
A
W
ꢀ
2
PD
Tj
Total Power Dissipation
Junction temperature
Storage temperature
40
150
-65~200
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
7.0
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5050 2N5051 2N5052
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
125
150
200
TYP.
MAX
UNIT
2N5050
Collector-emitter
sustaining voltage
VCEO(SUS)
2N5051 IC=0.1A ;IB=0
2N5052
V
VCEsat
VBEsat
VBE
Collector-emitter saturation voltage IC=2A; IB=0.5A
1.2
1.5
1.2
V
V
V
Base-emitter saturation voltage
Base-emitter on voltage
IC=2A; IB=0.5A
IC=750mA ; VCE=5V
2N4910 VCE=125V; IB=0
2N4911 VCE=150V; IB=0
2N4912 VCE=200V; IB=0
ICEO
Collector cut-off current
5.0
mA
ICBO
IEBO
hFE
fT
Collector cut-off current
Emitter cut-off current
DC current gain
VCB=Rated VCBO; IE=0
0.1
1.0
100
mA
mA
VEB=7V; IC=0
IC=750mA ; VCE=5V
IC=500mA;VCE=10V;f=1MHz
25
Transition frequency
10
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5050 2N5051 2N5052
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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