TND312S [SANYO]
ExPD (Excellent Power Device) General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive; EXPD （优秀的功率器件）用于PDP通用驱动程序维持脉冲驱动器，电机驱动器
| 型号： | TND312S |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | ExPD (Excellent Power Device) General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive |
| 文件： | 总5页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0417
SANYO Sem iconductors
DATA S HEET
ExPD (Excellent Power Device)
General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive,
Switching Power Supply, and DC / DC Converter Applications
TND312S
Features
•
Dual buffer.
•
Monolithic structure (High voltage CMOS process adopted).
Withstand voltage of 25V is assured.
Wide range of operating voltage : 4.5V to 25V.
Peak outpout current : 2A.
•
•
•
•
•
•
Fast switching time (25ns typical at 1000pF load).
Fully compatible input to TTL / CMOS. (V =not more than 2.6V, at V =4.5 to 25V)
IH DD
Built-in input pull-down resistance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
V
Supply Voltage
Input Voltage
V
0 to 25
DD
V
IN
GND--0.3 to V +0.3
DD
V
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
max
0.3
--55 to +150
--55 to +150
W
D
Tj
Tstg
°C
°C
Recommended Operating Conditions at Ta=25°C
Parameter
Operating Supply Voltage
Operating Temperature
Symbol
Conditions
Ratings
Unit
V
V
DD
Topr
4.5 to 25
--40 to +125
°C
Electrical Characteristics (AC Characteristics) at Ta=25°C, V =18V, V =5V
DD
IN
Ratings
Parameter
Turn-On Rise Time
Symbol
Conditions
Unit
min
typ
max
t
r
C =1000pF
20
25
30
45
35
40
45
60
ns
ns
ns
ns
L
Turn-Off Fall Time
t
f
C =1000pF
L
t
t
1
C =1000pF
L
D
Delay Time
2
D
C =1000pF
L
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0606IP TI IM TB-00001540
No. A0417-1/5
TND312S
Electrical Characteristics (DC Characteristics) at Ta=25°C, V =4.5 to 25V
DD
Ratings
typ
Parameter
Logic “1” Input Voltage
Symbol
Conditions
Unit
min
max
V
2.6
-- 1
V
V
IH
Logic “0” Input Voltage
V
0.8
IL
Logic “1” Input Bias Current
Logic “0” Input Bias Current
High Level Output Voltage
Low Level Output Voltage
I
IN
+
V
V
=V =25V
IN DD
20
55
1
µA
µA
V
I
--
IN
=0V or V
IN
DD
V
I
I
=0A
V
-- 0 . 1
DD
OH
O
V
=0A
0.1
4.5
0.2
V
OL
O
V
V
V
V
V
V
=10V, V =3V, (both inputs)
IN
1.0
mA
mA
A
DD
DD
DD
DD
DD
DD
V
Supply Current
Isupp
DD
=10V, V =0V, (both inputs)
IN
Output High Short Circuit Pulsed Current
Output Low Short Circuit Pulsed Current
I +
O
=18V, PW≤10µs, V
=18V, PW≤10µs, V
=0V
2.0
2.0
4
OUT
OUT
I
O
--
=18V
A
=18V, Iload=10mA, V
=“H”
6
5
Ω
OUT
Output On Resistance
ROUT
=18V, Iload=10mA, V
=“L”
3
Ω
OUT
Package Dimensions
unit : mm (typ)
7005-007
8
5
1 : NC
1
4
2 : IN A
3 : GND
4 : IN B
0.43
0.2
5 : OUT B
6 : VDD
7 : OUT A
8 : NC
5.0
1.27
0.595
SANYO : SOP8
Block Diagram
V
DD
IN
OUT
GND
No. A0417-2/5
TND312S
Switching Time Measuring Circuit
V
=18V
DD
4.7µF
0.1µF
TND312S
INPUT A
INPUT B
OUTPUT A
1000pF
OUTPUT B
1000pF
INPUT RISE
AND FALL
TIMES=5ns
INPUT
+5V
90%
10%
+0.4V
t
1
t
2
D
D
+18V
0V
90%
90%
NONINVERTING
OUTPUT
10%
10%
t
t
f
r
t -- V
r
t -- Tc
r
DD
50
40
30
20
50
V
=5V
V
V
=18V
=5V
IN
IN
DD
C =1000pF
L
C =1000pF
L
40
30
20
10
0
10
0
--50
--25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
IT03751
Case Temperature, Tc -- °C
IT03750
Supply Voltage, V
-- V
DD
t -- V
f
t -- Tc
f
DD
50
40
30
20
50
40
30
20
V
V
=18V
=5V
IN
V
=5V
DD
IN
C =1000pF
L
C =1000pF
L
10
0
10
0
--50
--25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
IT03753
Case Temperature, Tc -- °C
IT03752
Supply Voltage, V
-- V
DD
No. A0417-3/5
TND312S
t 1 -- V
D
t 1 -- Tc
D
DD
50
40
30
20
100
80
V
=5V
V
V
=18V
=5V
IN
IN
DD
C =1000pF
L
C =1000pF
L
60
40
10
0
20
0
--50
--25
--25
--25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
IT03762
Case Temperature, Tc -- °C
IT03761
Supply Voltage, V
-- V
t 2 -- V DD
t 2 -- Tc
D
D
DD
100
80
200
150
100
50
V
=5V
C =1000pF
V
V
=18V
=5V
IN
IN
L
DD
C =1000pF
L
60
40
20
0
0
4
--50
0
25
50
75
100
125
150
0
5
10
15
20
25
30
Case Temperature, Tc -- °C
IT03756
Supply Voltage, V
-- V
IT03757
DD
I (+) -- Tc
O
I (--) -- Tc
O
4
3
2
1
V
=18V
V
=18V
DD
DD
3
2
1
0
0
--50
0
25
50
75
100
125
150
--50
--25
0
25
50
75
100
125
150
Case Temperature, Tc -- °C
IT03758
Case Temperature, Tc -- °C
IT03759
I (±) -- V
O
P
-- Ta
DD
D
0.40
3.5
V
=5V
IN
C =10µF
L
0.35
0.30
0.25
0.20
0.15
0.10
3.0
2.5
2.0
1.5
1.0
0.5
0
0.05
0
0
5
10
15
20
25
30
IT11081
0
20
40
60
80
100
120
140
160
Supply Voltage, V
-- V
Ambient Temperature, Ta -- °C
IT03760
DD
No. A0417-4/5
TND312S
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of December, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0417-5/5
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