LA6584M [SANYO]
BTL Driver Single-Phase Full-Wave; BTL驱动单相全波型号: | LA6584M |
厂家: | SANYO SEMICON DEVICE |
描述: | BTL Driver Single-Phase Full-Wave |
文件: | 总5页 (文件大小:89K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENN8349
Monolithic Linear IC
LA6584M
BTL Driver Single-Phase Full-Wave
Fan Motor Driver
Overview
The LA6584M is Single-phase bipolar fan motor is put into silent driving by means of BTL output linear drive, offering
high efficiency and power saving by suppressing the reactive current. Lock protection and rotation signal (FG, RD)
circuits are built in, ensuring optimum application to small fans for notebook PC, consumer equipment power supply, car
audio system, CPU cooler, etc. that require high reliability and low noise.
Functions and Applications
• Single-phase full-wave driver for fan motor
Specitications
Absolute Maximum Ratings at Ta = 25 °C
Parameter
Output voltage
Symbol
Conditions
Ratings
Unit
V
V
max
15
1.5
1.6
15
CC
Allowable dissipation
Output current
Pd max
Mounted on a specified board*
W
A
I
max
OUT
Output withstand voltage
V
max
V
OUT
RD/FG output pin output
Withstand voltage
VRD/FG max
15
V
RD/FG output current
IRD/FG max
IB max
Topr
5
10
mA
HB output voltage
mA
°C
Operating temperature
Storage temperature
-30 to +90
-55 to +150
Tstg
°C
*Mounted on a specified board (114.3×76.1×1.6mm, Glass epoxy)
Recommended Operating Range at Ta = 25 °C
Parameter
Supply voltage
Symbol
Conditions
Ratings
Unit
V
V
2.8 to 14.0
CC
Common-phase input voltage
Range of Hall input
VICM
0 to V -1.5
CC
V
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
92706 / 62005 MS PC No.8349-1/5
LA6584M
Electrical Characteristics at Ta = 25 °C, V
CC
= 12 V, unless especially specified.
Ratings
typ
6
Parameter
Symbol
Conditions
Unit
min
max
Circuit current
I
I
1
During drive (CT = L)
4
9
mA
mA
µA
µA
-
CC
2
During lock protection (CT = H)
2
2.0
0.15
9
4
6
3.5
0.30
15
CC
Lock detection capacitor charge current
Capacitor discharge current
Capacitor charge and discharge current ratio
CT charge voltage
ICT1
ICT2
RCT
VCT1
VCT2
VOL
2.8
0.23
12
RCD = ICT1/ICT2
1.6
0.6
1.7
0.7
0.2
0.9
7
1.8
0.8
0.3
1.2
15
V
CT discharge voltage
V
OUT output L saturation voltage
OUT output H saturation voltage
Hall input sensitivity
I
I
= 200 mA
= 200 mA
V
O
O
VOH
VHN
V
Zero peak value
mV
(including offset and hysteresis)
IRD/FG = 5 mA
RD/FG output pin L voltage
RD/FG output pin leak current
HB output L voltage
VRD/FG
0.1
1
0.2
30
V
µA
V
IRD/FGL
VHBL
VRD/FG = 15 V
IHB = 5 mA
1.3
1.5
1.7
Package Dimensions
unit : mm
3097B
No.8349-2/5
LA6584M
Truth Table
IN-
IN+
CT
L
OUT1
OUT2
FG
RD
L
Mode
H
L
-
L
H
-
H
L
L
H
L
H
-
During rotation
H
OFF
OFF
H
During overheat protection
Pin Assignment
F-GND
F-GND
IN+
HB
(NC)
RD
FG
IN-
(NC)
(NC)
CT
LA6584M
V
CC
(NC)
OUT1
GND
(NC)
OUT2
(NC)
F-GND
F-GND
Top view
No.8349-3/5
LA6584M
Sample Application Circuit
Di
Cr
*4
*1
V
CC
RD
FG
R2
HB
IN-
H
OUT1
OUT2
*2
HB
IN+
R1
*6
*5
*3
R2
CT
GND
H
IN-
On board element
IN+
*1
*2
When Di to prevent breakdown in case of reverse connection is used, it is necessary to insert a capacitor Cr to
secure the regenerative current route. Similarly, Cr is necessary to enhance the reliability when there is no
capacitor near the fan power line.
To obtain Hall bias from V , carry out 1/2×V
bias as shown in the figure. Linear driving is made through
CC
CC
voltage control of the coil by amplifying the Hall output. When the Hall element output is large, the startup
performance and efficiency are improved. Adjustment of the Hall element can reduce the noise further.
When the Hall bias is taken from the HB pin, constant-voltage bias is made with about 2.0 V. Therefore, the Hall
element can provide the output satisfactory in temperature characteristics. Adjustment of the Hall output
*3
amplitude is made with R1. (When V
= 12 V, the step *2 above proves advantageous for IC heat generation.)
CC
*4
*5
Keep this open when not used.
When the wiring from the Hall output to IC Hall input is long, noise may be carried through the wiring.
In this case, insert the capacitor as shown in the figure.
No.8349-4/5
LA6584M
Internal Equivalent Circuit
V
CC
1.5VRG
HB
IN+
IN-
OUT1
H
OUT2
GND
FG
Control
Circuit
Charge/discharge circuit
RD
Discharge
pulse
CT=0.47 to 1µF
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted
in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
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mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual
property rights or other rights of third parties.
This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.
No.8349-5/5
PS
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