FX851 [SANYO]
DC-DC Converter Applications; DC- DC转换器应用
| 型号： | FX851 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | DC-DC Converter Applications |
| 文件： | 总4页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:EN4891
FX851
MOSFET:P-Channel Silicon MOSFET
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
Package Dimensions
unit:mm
· Composite type composed of a low ON-resistance P-
channel MOSFET for ultrahigh-speed switching and
low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates high-
density mounting.
2119
[FX851]
· The FX851 is formed with 2 chips, one being
equivalent to the 2SJ187 and the other the SB07-03P,
placed in one package.
1:Gate
2:Source
3:No connection
4:Anode
Electrical Connection
1:Gate
2:Source
5:Cathode
6:Drain
3:No connection
4:Anode
5:Cathode
6:Drain
SANYO:XP6
(Bottom view)
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
V
–30
±15
–1
V
V
DSS
V
GSS
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
I
PW≤10µs, duty cycle≤1%
–4
A
DP
P
D
P
D
6
W
W
˚C
˚C
Tc=25˚C
Mounted on ceramic board (750mm2×0.8mm)
1.5
150
Channel Temperature
Tch
Storage Temperature
Tstg
–55 to +150
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
V
30
V
V
RRM
V
35
700
RSM
I
mA
A
O
I
50Hz sine wave, 1 cycle
5
FSM
Tj
–55 to +125
–55 to +150
˚C
˚C
Storage Temperature
Tstg
Continued on next page.
· Marking:851
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095MO (KOTO) TA-0119 No.4891-1/4
FX851
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[MOSFET]
D-S Breakdown Voltage
V
I
=–1mA, V =0
D GS
–30
V
µA
µA
V
(BR)DSS
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
I
V
V
V
V
I
=–30V, V =0
–100
±10
DSS
DS
GS
DS
DS
GS
I
=±12V, V =0
DS
=–10V, I =–1mA
D
=–10V, I =–500mA
D
GSS
V
–1.0
0.6
–2.0
GS(off)
| Y
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
|
1.0
0.5
0.75
170
110
20
S
fs
R
=–500mA, V =–10V
GS
0.75
1.1
Ω
DS(on)
D
R
I
=–500mA, V =–4V
D GS
Ω
DS(on)
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
V
V
V
=–10V, f=1MHz
pF
pF
pF
ns
ns
ns
ns
V
DS
Coss
Crss
=–10V, f=1MHz
DS
=–10V, f=1MHz
DS
t
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
I =–1A, V =0
10
d(on)
t
13
r
Turn-OFF Delay Time
Fall Time
t
70
d(off)
t
f
30
Diode Forward Voltage
[SBD]
V
–0.9
SD
S
GS
Reverse Voltage
V
R
V
F
I
=300µA
30
V
V
R
Forward Voltage
I =700mA
0.55
80
F
Reverse Current
I
V
V
=15V
µA
pF
R
R
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
C
=10V, f=1MHz Cycle
26
R
trr
I =I =100mA, See specified Test CIrcuit
Mounted on ceramic board (750mm2×0.8mm)
10
ns
F
R
˚C/W
Rthj-a
100
Switching Time Test CIrcuit
[MOSFET]
Trr Test Circuit
[SBD]
No.4891-2/4
FX851
No.4891-3/4
FX851
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.4891-4/4
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