FX203 [SANYO]

Ultrahigh-Speed Switching Applications; 超高速开关应用
FX203
型号: FX203
厂家: SANYO SEMICON DEVICE    SANYO SEMICON DEVICE
描述:

Ultrahigh-Speed Switching Applications
超高速开关应用

开关
文件: 总3页 (文件大小:106K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number:EN5264  
FX203  
P-Channel Silicon MOSFET  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Low ON-resistance.  
· Ultrahigh-speed switching.  
· Low-voltage drive.  
2121  
[FX203]  
Switching Time Test CIrcuit  
1:No Contact  
2:Gate  
3:Source  
4:No Contact  
5:Drain  
6:Drain  
SANYO:XP5  
(Bottom view)  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
V
Drain-to-Source Voltage  
V
–30  
±20  
–4  
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
I
PW10µs, duty cycle1%  
–16  
8
A
DP  
P
D
P
D
W
W
˚C  
˚C  
Tc=25˚C  
Mounted on ceramic board (750mm2×0.8mm)  
2
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
D-S Breakdown Voltage  
Symbol  
Conditions  
Unit  
min  
–30  
max  
V
I
=–1mA, V =0  
D GS  
V
µA  
µA  
V
(BR)DSS  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
I
V
V
V
V
I
=–30V, V =0  
–100  
±10  
DSS  
DS  
GS  
DS  
DS  
GS  
I
=±16V, V =0  
DS  
GSS  
V
=–10V, I =–1mA  
D
–1.0  
1.5  
–2.5  
GS(off)  
| Y  
Forward Transfer Admittance  
Static Drain-to-Source ON-State Resistance  
|
=–10V, I =–2A  
D
3
S
fs  
R
=–2A, V =–10V  
GS  
120  
210  
370  
230  
70  
160  
290  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
DS(on)  
D
R
I
=–2A, V =–4V  
D GS  
DS(on)  
Ciss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
V
V
V
=–10V, f=1MHz  
DS  
Coss  
Crss  
=–10V, f=1MHz  
DS  
=–10V, f=1MHz  
DS  
t
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
10  
d(on)  
t
50  
r
Turn-OFF Delay Time  
Fall Time  
t
135  
125  
–1.0  
d(off)  
t
f
Diode Forward Voltage  
V
I
=–4A, V =0  
S GS  
–1.2  
SD  
· Marking:203  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
52098HA (KT)/O2196YK (KOTO) TA-0041 No.5264-1/3  
FX203  
No.5264-2/3  
FX203  
No products described or contained herein are intended for use in surgical implants, life-support systems,  
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and  
the like, the failure of which may directly or indirectly cause injury, death or property loss.  
Anyone purchasing any products described or contained herein for an above-mentioned use shall:  
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,  
subsidiaries and distributors and all their officers and employees, jointly and severally, against any  
and all claims and litigation and all damages, cost and expenses associated with such use:  
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or  
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of  
their officers and employees jointly or severally.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-  
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees  
are made or implied regarding its use or any infringements of intellectual property rights or other rights of  
third parties.  
This catalog provides information as of May, 1998. Specifications and information herein are subject to  
change without notice.  
PS No.5264-3/3  

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