ENA1108 [SANYO]
NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifier Applications; NPN外延平面硅晶体管VHF高频放大器的应用
| 型号： | ENA1108 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifier Applications |
| 文件： | 总6页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1108
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
15GN03MA
VHF High-frequency Amplifier Applications
Applications
•
VHF, RF, MIXER, OSC, IF amplifier.
Features
•
High cut-off frequency : f =1.5GHz typ.
High gain
Ultrasmall package permitting applied sets to be small and slim.
T
: ⏐S21e⏐2=13dB typ (f=0.4GHz).
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
20
10
CBO
CEO
EBO
V
3
V
I
70
mA
mW
°C
°C
C
Collector Dissipation
P
When mounted on ceramic substrate (250mm2✕0.8mm)
400
150
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
0.1
1
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
I
V
V
V
V
=10V, I =0A
μA
μA
CBO
CB
EB
CE
CE
E
=2V, I =0A
EBO
C
h
=5V, I =10mA
100
1.0
180
FE
C
Gain-Bandwidth Product
Marking : ZC
f
=5V, I =20mA
1.5
GHz
T
C
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
www.semiconductor-sanyo.com/network
O2908AB MS IM TC-00001669
No. A1108-1/6
15GN03MA
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Cob
Cre
V
CB
V
CB
V
CE
V
CE
=10V, f=1MHz
=10V, f=1MHz
0.95
0.65
13
1.25
pF
pF
dB
dB
2
⏐
S21e
⏐
=5V, I =20mA, f=0.4GHz
10
C
NF
=3V, I =2mA, f=0.4GHz
1.6
C
Package Dimensions
unit : mm (typ)
7023-009
0.3
0.15
3
0 to 0.1
1
2
0.65 0.65
0.3
0.6
0.9
2.0
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
I
-- V
I
-- V
BE
C
CE
C
100
90
80
70
60
50
40
30
20
80
V
=5V
CE
70
60
50
40
30
20
10
0
10
0
I =0mA
B
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector-to-Emitter Voltage, V
-- V IT08096
Base-to-Emitter Voltage, V
BE
-- V
IT08097
CE
f
-- I
h
FE
-- I
C
T
C
3
2
3
2
V
=5V
V
=5V
CE
CE
1.0
7
5
100
7
3
1.0
5
1.0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
100
IT08098
10
100
IT08099
Collector Current, I -- mA
Collector Current, I -- mA
C
C
No. A1108-2/6
15GN03MA
Cob -- V
CB
Cre -- V
CB
3
2
3
2
f=1MHz
f=1MHz
1.0
1.0
7
5
7
5
2
3
5
7
2
3
5
7
2
IT08100
2
3
5
7
2
3
5
7
2
0.1
1.0
10
0.1
1.0
10
Collector-to-Base Voltage, V
-- V
Collector-to-Base Voltage, V
-- V
IT08101
CB
CB
2
NF -- I
C
S21e
-- I
C
⏐
⏐
14
12
10
8
10
V
=3V
V
=5V
f=400MHz
CE
f=400MHz
CE
7
5
3
2
6
4
1.0
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
1.0
10
100
IT08102
1.0
10
Collector Current, I -- mA
IT08103
Collector Current, I -- mA
C
C
P
-- Ta
C
450
400
350
300
250
200
150
100
When mounted on ceramic substrate
(250mm2✕0.8mm)
50
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT08104
No. A1108-3/6
15GN03MA
S Parameters (Common emitter)
V
V
V
V
=5V, I =1mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
S
∠S21
153.95
134.85
118.70
105.65
95.12
86.92
80.31
74.68
69.44
65.05
S
∠S12
66.57
53.42
41.89
33.66
29.42
28.20
30.19
36.45
44.81
55.74
S
⏐
22
∠S22
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.927
0.877
0.831
0.796
0.772
0.759
0.754
0.750
0.746
0.743
--39.48
3.051
2.643
2.258
1.925
1.645
1.420
1.255
1.132
1.033
0.948
0.045
0.072
0.090
0.093
0.090
0.085
0.080
0.072
0.067
0.065
0.938
0.879
0.834
0.806
0.796
0.796
0.792
0.790
0.793
0.796
--5.28
200
--72.13
--10.12
--15.17
--20.70
--25.57
--28.96
--31.48
--34.42
--37.89
--41.83
300
--97.09
400
--115.43
--128.51
--139.76
--148.33
--155.54
--162.07
--167.59
500
600
700
800
900
1000
=5V, I =3mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
S
∠S21
137.99
115.44
102.51
93.53
85.87
79.64
74.61
70.09
65.76
61.98
S
∠S12
55.23
43.07
40.37
41.56
46.54
53.71
62.91
70.67
78.25
83.86
S
⏐ ⏐
22
∠S22
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.819
0.733
0.698
0.682
0.674
0.669
0.669
0.671
0.672
0.672
--66.73
7.544
5.274
3.901
3.111
2.563
2.175
1.884
1.680
1.520
1.386
0.036
0.050
0.055
0.056
0.056
0.057
0.061
0.067
0.075
0.086
0.862
0.730
0.691
0.673
0.680
0.686
0.686
0.690
0.695
0.700
--14.15
--17.07
--20.60
--22.18
--25.14
--28.23
--30.58
--33.35
--36.65
--40.53
200
--107.53
--130.44
--144.75
--154.20
--161.91
--167.44
--172.33
--176.77
179.40
300
400
500
600
700
800
900
1000
=5V, I =5mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
S
∠S21
129.32
107.46
95.99
88.14
81.98
76.86
72.14
68.01
64.03
60.67
S
∠S12
52.32
43.79
45.46
51.02
57.47
65.57
72.10
78.01
84.74
88.35
S
⏐ ⏐
22
∠S22
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.745
0.673
0.650
0.643
0.641
0.641
0.642
0.645
0.648
0.649
--85.56
10.487
6.596
4.641
3.583
2.926
2.468
2.139
1.898
1.708
1.565
0.031
0.041
0.044
0.046
0.051
0.055
0.064
0.072
0.082
0.096
0.808
0.695
0.655
0.641
0.638
0.640
0.640
0.643
0.654
0.663
--17.13
--19.72
--20.94
--22.34
--24.48
--27.05
--29.96
--32.86
--36.05
--39.64
200
--125.68
--144.45
--155.93
--163.08
--169.17
--173.85
--177.59
179.02
300
400
500
600
700
800
900
1000
175.69
=5V, I =10mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
S
∠S21
118.07
99.84
90.62
84.05
78.75
74.15
69.78
65.84
62.06
58.71
S
∠S12
49.17
50.50
55.71
63.53
72.26
76.93
81.33
85.49
88.11
90.16
S
⏐
22
∠S22
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.648
0.617
0.610
0.611
0.612
0.616
0.620
0.622
0.629
0.632
--111.11
--144.00
--157.84
--165.84
--171.10
--175.51
--179.00
178.16
13.755
7.787
5.322
4.071
3.295
2.770
2.401
2.122
1.906
1.741
0.025
0.031
0.035
0.042
0.049
0.059
0.068
0.080
0.091
0.104
0.710
0.618
0.593
0.585
0.585
0.591
0.595
0.598
0.610
0.619
--18.60
--18.94
--19.18
--20.81
--23.14
--25.68
--28.62
--31.66
--34.80
--38.30
200
300
400
500
600
700
800
900
175.42
1000
172.79
No. A1108-4/6
15GN03MA
S Parameters (Common emitter)
V
V
V
V
=5V, I =15mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
S
∠S21
112.79
96.59
88.34
82.26
77.23
72.65
68.50
64.59
60.86
57.39
S
∠S12
49.66
56.25
63.87
71.61
77.39
81.90
84.02
86.75
88.46
90.57
S
⏐
22
∠S22
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.608
0.596
0.594
0.600
0.601
0.606
0.613
0.617
0.624
0.628
--124.26
--152.05
--163.33
--169.82
--173.91
--177.77
179.41
15.141
8.271
5.613
4.267
3.457
2.902
2.501
2.210
1.988
1.808
0.021
0.028
0.034
0.042
0.052
0.061
0.071
0.083
0.094
0.108
0.661
0.584
0.566
0.561
0.564
0.570
0.573
0.579
0.592
0.599
--18.68
--17.69
--18.43
--19.87
--22.13
--24.90
--27.96
--30.98
--34.26
--37.51
200
300
400
500
600
700
800
176.72
900
174.31
1000
171.96
=5V, I =20mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
S
∠S21
109.73
94.77
86.97
80.95
76.08
71.70
67.43
63.56
59.99
56.47
S
∠S12
50.98
60.57
66.88
73.76
79.21
82.86
85.71
87.76
89.02
90.88
S
⏐ ⏐
22
∠S22
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.587
0.589
0.590
0.593
0.598
0.604
0.611
0.616
0.624
0.628
--132.33
--156.83
--166.31
--171.88
--175.61
--178.89
178.36
15.887
8.517
5.751
4.373
3.529
2.958
2.550
2.257
2.026
1.838
0.018
0.026
0.034
0.043
0.052
0.063
0.073
0.085
0.097
0.109
0.630
0.563
0.549
0.547
0.552
0.558
0.560
0.569
0.581
0.590
--18.23
--17.10
--17.73
--19.30
--21.55
--24.41
--27.19
--30.31
--33.63
--36.92
200
300
400
500
600
700
800
176.07
900
173.75
1000
171.39
=5V, I =30mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
S
∠S21
106.28
92.68
85.19
79.42
74.54
70.07
65.88
61.99
58.20
54.81
S
∠S12
56.75
65.21
71.56
77.01
82.34
84.47
86.83
88.18
90.72
91.80
S
⏐ ⏐
22
∠S22
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.574
0.584
0.587
0.596
0.599
0.609
0.616
0.621
0.631
0.638
--141.90
--161.69
--169.42
--174.12
--177.29
179.93
177.48
175.27
173.12
170.96
16.518
8.702
5.851
4.433
3.570
2.987
2.574
2.268
2.033
1.845
0.017
0.024
0.033
0.042
0.053
0.063
0.073
0.085
0.096
0.111
0.594
0.541
0.531
0.532
0.536
0.545
0.550
0.559
0.571
0.582
--17.60
--16.13
--16.69
--18.41
--20.78
--23.60
--26.54
--29.78
--33.08
--36.46
200
300
400
500
600
700
800
900
1000
=5V, I =50mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
S
∠S21
102.78
90.13
82.89
77.21
72.11
67.60
63.15
59.33
55.44
51.95
S
∠S12
58.15
71.59
76.27
79.95
83.78
86.83
88.24
89.54
92.59
94.10
S
⏐
22
∠S22
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.578
0.596
0.603
0.611
0.618
0.629
0.639
0.647
0.657
0.664
--151.54
--166.79
--172.63
--176.28
--178.98
178.44
176.23
174.01
171.87
169.65
16.222
8.428
5.641
4.254
3.421
2.851
2.452
2.155
1.921
1.740
0.015
0.023
0.033
0.043
0.052
0.064
0.074
0.087
0.099
0.113
0.564
0.524
0.520
0.521
0.530
0.538
0.546
0.555
0.568
0.581
--16.24
--14.78
--15.94
--17.71
--20.31
--23.39
--26.40
--29.74
--33.37
--36.94
200
300
400
500
600
700
800
900
1000
No. A1108-5/6
15GN03MA
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of October, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1108-6/6
相关型号：
ENA1111
NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications
SANYO
ENA1112
Monolithic Digital IC For Fan Motor Single-phase Full-wave Pre-driver with Speed Control Function
SANYO
ENA1114
NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications
SANYO
ENA1115
NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications
SANYO
©2020 ICPDF网 联系我们和版权申明